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CY62148EV30LL-45BVI PDF预览

CY62148EV30LL-45BVI

更新时间: 2024-11-05 12:22:51
品牌 Logo 应用领域
赛普拉斯 - CYPRESS 存储内存集成电路静态存储器
页数 文件大小 规格书
18页 414K
描述
4-Mbit (512 K × 8) Static RAM

CY62148EV30LL-45BVI 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Active零件包装代码:BGA
包装说明:VFBGA, BGA36,6X8,30针数:36
Reach Compliance Code:compliantECCN代码:3A991.B.2.A
HTS代码:8542.32.00.41风险等级:1.77
最长访问时间:45 nsI/O 类型:COMMON
JESD-30 代码:R-XBGA-B36JESD-609代码:e0
长度:8 mm内存密度:4194304 bit
内存集成电路类型:STANDARD SRAM内存宽度:8
湿度敏感等级:3功能数量:1
端子数量:36字数:524288 words
字数代码:512000工作模式:ASYNCHRONOUS
最高工作温度:85 °C最低工作温度:-40 °C
组织:512KX8输出特性:3-STATE
封装主体材料:UNSPECIFIED封装代码:VFBGA
封装等效代码:BGA36,6X8,30封装形状:RECTANGULAR
封装形式:GRID ARRAY, VERY THIN PROFILE, FINE PITCH并行/串行:PARALLEL
峰值回流温度(摄氏度):220电源:2.5/3.3 V
认证状态:Not Qualified座面最大高度:1 mm
最大待机电流:0.000007 A最小待机电流:1.5 V
子类别:SRAMs最大压摆率:0.02 mA
最大供电电压 (Vsup):3.6 V最小供电电压 (Vsup):2.2 V
标称供电电压 (Vsup):3 V表面贴装:YES
技术:CMOS温度等级:INDUSTRIAL
端子面层:TIN LEAD端子形式:BALL
端子节距:0.75 mm端子位置:BOTTOM
处于峰值回流温度下的最长时间:NOT SPECIFIED宽度:6 mm
Base Number Matches:1

CY62148EV30LL-45BVI 数据手册

 浏览型号CY62148EV30LL-45BVI的Datasheet PDF文件第2页浏览型号CY62148EV30LL-45BVI的Datasheet PDF文件第3页浏览型号CY62148EV30LL-45BVI的Datasheet PDF文件第4页浏览型号CY62148EV30LL-45BVI的Datasheet PDF文件第5页浏览型号CY62148EV30LL-45BVI的Datasheet PDF文件第6页浏览型号CY62148EV30LL-45BVI的Datasheet PDF文件第7页 
CY62148EV30 MoBL®  
4-Mbit (512 K × 8) Static RAM  
4-Mbit (512  
K × 8) Static RAM  
Features  
Functional Description  
Very high speed: 45 ns  
Wide voltage range: 2.20 V to 3.60 V  
The CY62148EV30 is a high performance CMOS static RAM  
organized as 512 K words by 8 bits. This device features  
advanced circuit design to provide ultra low active current. This  
is ideal for providing More Battery Life™ (MoBL) in portable  
applications such as cellular telephones. The device also has an  
automatic power down feature that significantly reduces power  
consumption. Placing the device into standby mode reduces  
power consumption by more than 99 percent when deselected  
(CE HIGH). The eight input and output pins (I/O0 through I/O7)  
are placed in a high impedance state when the device is  
deselected (CE HIGH), the outputs are disabled (OE HIGH), or  
during a write operation (CE LOW and WE LOW).  
Temperature range:  
Industrial: –40 °C to +85 °C  
Automotive-A: –40 °C to +85 °C  
Pin compatible with CY62148DV30  
Ultra low standby power  
Typical standby current: 1 A  
Maximum standby current: 7 A (Industrial)  
Ultra low active power  
Typical active current: 2 mA at f = 1 MHz  
To write to the device, take Chip Enable (CE) and Write Enable  
(WE) inputs LOW. Data on the eight I/O pins (I/O0 through I/O7)  
is then written into the location specified on the address pins (A0  
through A18).  
Easy memory expansion with CE and OE features  
Automatic power down when deselected  
To read from the device, take Chip Enable (CE) and Output  
Enable (OE) LOW while forcing Write Enable (WE) HIGH. Under  
these conditions, the contents of the memory location specified  
by the address pins appear on the I/O pins.  
Complementary metal oxide semiconductor (CMOS) for  
optimum speed and power  
Available in Pb-free 36-ball very fine-pitch ball grid array  
(VFBGA), 32-pin thin small outline package (TSOP) II, and  
32-pin small outline integrated circuit (SOIC) [1] packages  
Logic Block Diagram  
I/O  
0
1
2
3
4
5
6
7
A
0
INPUT BUFFER  
A
1
I/O  
A
2
A
3
I/O  
A
4
A
5
I/O  
A
6
512K x 8  
ARRAY  
A
A
A
A
A
A
7
I/O  
8
9
I/O  
10  
11  
12  
I/O  
I/O  
CE  
POWER  
DOWN  
COLUMN DECODER  
WE  
OE  
Note  
1. SOIC package is available only in 55 ns speed bin.  
Cypress Semiconductor Corporation  
Document Number: 38-05576 Rev. *O  
198 Champion Court  
San Jose, CA 95134-1709  
408-943-2600  
Revised September 4, 2012  

CY62148EV30LL-45BVI 替代型号

型号 品牌 替代类型 描述 数据表
CY62148EV30LL-45BVXI CYPRESS

完全替代

4-Mbit (512K x 8) Static RAM

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CY62148EV30LL-45ZSXAT CYPRESS

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CY62148EV30LL-45ZSXI CYPRESS

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CY62148EV30LL-45ZSXI INFINEON

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Asynchronous SRAM
CY62148EV30LL-45ZSXIT CYPRESS

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CY62148EV30LL-45ZSXIT INFINEON

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Asynchronous SRAM