5秒后页面跳转
CY62148EV30_09 PDF预览

CY62148EV30_09

更新时间: 2024-11-20 06:51:35
品牌 Logo 应用领域
赛普拉斯 - CYPRESS /
页数 文件大小 规格书
12页 855K
描述
4-Mbit (512K x 8) Static RAM

CY62148EV30_09 数据手册

 浏览型号CY62148EV30_09的Datasheet PDF文件第2页浏览型号CY62148EV30_09的Datasheet PDF文件第3页浏览型号CY62148EV30_09的Datasheet PDF文件第4页浏览型号CY62148EV30_09的Datasheet PDF文件第5页浏览型号CY62148EV30_09的Datasheet PDF文件第6页浏览型号CY62148EV30_09的Datasheet PDF文件第7页 
MoBL® CY62148EV30  
4-Mbit (512K x 8) Static RAM  
Features  
Functional Description  
Very high speed: 45 ns  
Wide voltage range: 2.20V to 3.60V  
The CY62148EV30[2] is a high performance CMOS static RAM  
organized as 512K words by 8 bits. This device features  
advanced circuit design to provide ultra low active current. This  
is ideal for providing More Battery Life™ (MoBL®) in portable  
applications such as cellular telephones. The device also has an  
automatic power down feature that significantly reduces power  
consumption. Placing the device into standby mode reduces  
power consumption by more than 99 percent when deselected  
(CE HIGH). The eight input and output pins (IO0 through IO7) are  
placed in a high impedance state when the device is deselected  
(CE HIGH), the outputs are disabled (OE HIGH), or during a write  
operation (CE LOW and WE LOW).  
Temperature ranges  
Industrial: –40°C to +85°C  
Automotive-A: –40°C to +85°C  
Pin compatible with CY62148DV30  
Ultra low standby power  
Typical standby current: 1 μA  
Maximum standby current: 7 μA (Industrial)  
Ultra low active power  
Typical active current: 2 mA at f = 1 MHz  
To write to the device, take Chip Enable (CE) and Write Enable  
(WE) inputs LOW. Data on the eight IO pins (IO0 through IO7) is  
then written into the location specified on the address pins (A0  
through A18).  
Easy memory expansion with CE, and OE features  
Automatic power down when deselected  
CMOS for optimum speed and power  
To read from the device, take Chip Enable (CE) and Output  
Enable (OE) LOW while forcing Write Enable (WE) HIGH. Under  
these conditions, the contents of the memory location specified  
by the address pins appear on the IO pins.  
Available in Pb-free 36-ball VFBGA, 32-pin TSOP II and 32-pin  
SOIC [1] packages  
Logic Block Diagram  
A
0
IO  
0
INPUT BUFFER  
A
1
A
2
IO  
1
A
3
A
4
IO  
2
A
5
A
6
512K x 8  
ARRAY  
IO  
3
A
A
A
A
A
A
7
8
IO  
4
9
10  
11  
12  
IO  
5
IO  
6
CE  
IO  
POWER  
DOWN  
7
COLUMN DECODER  
WE  
OE  
Notes  
1. SOIC package is available only in 55 ns speed bin.  
2. For best practice recommendations, refer to the Cypress application note “System Design Guidelines” at http://www.cypress.com.  
Cypress Semiconductor Corporation  
Document #: 38-05576 Rev. *G  
198 Champion Court  
San Jose, CA 95134-1709  
408-943-2600  
Revised August 4, 2008  
[+] Feedback  

与CY62148EV30_09相关器件

型号 品牌 获取价格 描述 数据表
CY62148EV30_12 CYPRESS

获取价格

4-Mbit (512 K × 8) Static RAM
CY62148EV30LL CYPRESS

获取价格

4-Mbit (512K x 8) Static RAM
CY62148EV30LL-45BVI CYPRESS

获取价格

4-Mbit (512 K × 8) Static RAM
CY62148EV30LL-45BVI INFINEON

获取价格

Asynchronous SRAM
CY62148EV30LL-45BVIT INFINEON

获取价格

Asynchronous SRAM
CY62148EV30LL-45BVXI CYPRESS

获取价格

4-Mbit (512K x 8) Static RAM
CY62148EV30LL-45BVXI INFINEON

获取价格

Asynchronous SRAM
CY62148EV30LL-45BVXIT INFINEON

获取价格

Asynchronous SRAM
CY62148EV30LL-45ZSXA CYPRESS

获取价格

4-Mbit (512K x 8) Static RAM
CY62148EV30LL-45ZSXAT CYPRESS

获取价格

Standard SRAM, 512KX8, 45ns, CMOS, PDSO32, LEAD FREE, TSOP2-32