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CY62146GE30 PDF预览

CY62146GE30

更新时间: 2024-11-10 01:04:23
品牌 Logo 应用领域
赛普拉斯 - CYPRESS /
页数 文件大小 规格书
22页 661K
描述
4-Mbit (256K words × 16 bit) Static RAM with

CY62146GE30 数据手册

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CY62146G/CY62146GE  
®
CY62146GSL/CY62146GESL MoBL  
4-Mbit (256K words × 16 bit) Static RAM with  
Error-Correcting Code (ECC)  
4-Mbit (256K words  
× 16 bit) Static RAM with Error-Correcting Code (ECC)  
devices are accessed by asserting both chip enable inputs – CE1  
as low and CE2 as HIGH.  
Features  
High speed: 45 ns/55 ns  
Data writes are performed by asserting the Write Enable (WE)  
input LOW, while providing the data on I/O0 through I/O15 and  
address on A0 through A17 pins. The Byte High Enable (BHE)  
and Byte Low Enable (BLE) inputs control write operations to the  
upper and lower bytes of the specified memory location. BHE  
Ultra-low standby power  
Typical standby current: 3.5 A  
Maximum standby current: 8.7 A  
Embedded ECC for single-bit error correction[1]  
Wide voltage range: 1.65V to 2.2 V, 2.2 V to 3.6 V, 4.5 V to 5.5 V  
1.0-V data retention  
controls I/O8 through I/O15 and BLE controls I/O0 through I/O7.  
Data reads are performed by asserting the Output Enable (OE)  
input and providing the required address on the address lines.  
Read data is accessible on the I/O lines (I/O0 through I/O15).  
Byte accesses can be performed by asserting the required byte  
enable signal (BHE or BLE) to read either the upper byte or the  
lower byte of data from the specified address location.  
TTL-compatible inputs and outputs  
Error indication (ERR) pin to indicate 1-bit error detection and  
correction  
Pb-free 48-ball VFBGA and 44-pin TSOP II packages  
All I/Os (I/O0 through I/O15) are placed in a HI-Z state when the  
device is deselected (CE HIGH for a single chip enable device  
and CE1 HIGH/CE2 LOW for a dual chip enable device), or  
control signals are deasserted (OE, BLE, BHE).  
Functional Description  
CY62146G/ CY62146GE and CY62146GSL / CY62146GESL  
are high-performance CMOS low-power (MoBL) SRAM devices  
with embedded ECC. Both devices are offered in single and dual  
chip enable options and in multiple pin configurations. The  
CY62146GE/ CY62146GESL device includes an ERR pin that  
signals an error-detection and correction event during a read  
cycle. The CY62146GSL/CY62146GESL[1] device supports a  
wide voltage range of 2.2 V–3.6 V and 4.5 V–5.5 V.  
On the CY62146GE/CY62146GESL devices, the detection and  
correction of a single-bit error in the accessed location is  
indicated by the assertion of the ERR output (ERR = HIGH)[2]  
.
See  
the  
Truth  
Table  
CY62146G/CY62146GE/CY62146GSL/CY62146GESL  
page 17 for a complete description of read and write modes.  
on  
The logic block diagrams are on page 2.  
Devices with a single chip enable input are accessed by  
asserting the chip enable (CE) input LOW. Dual chip enable  
Product Portfolio  
Power Dissipation  
Operating ICC, (mA)  
Features and  
Options  
(see the Pin  
Configurations  
section)  
Standby, ISB2 (µA)  
Product[3]  
Range  
VCC Range (V) Speed (ns)  
f = fmax  
Typ[4]  
Max  
Typ[4]  
Max  
CY62146G(E)18  
CY62146G(E)30  
CY62146G(E)  
Industrial  
1.65 V–2.2 V  
2.2 V–3.6 V  
4.5 V–5.5 V  
55  
45  
15  
15  
20  
20  
3.5  
3.5  
10  
Single or dual  
Chip Enables  
8.7  
Optional ERR  
pin  
CY62146G(E)SL[5]  
2.2 V–3.6 V and  
4.5 V–5.5 V  
Notes  
1. Datasheet specifications are not guaranteed for V in the range of 3.6 V to 4.5 V.  
CC  
2. This device does not support automatic write-back on error detection.  
3. The ERR pin is available only for devices which have ERR option “E” in the ordering code. Refer Ordering Information for details.  
4. Typical values are included for reference only and are not guaranteed or tested. Typical values are measured at V = 1.8 V (for a V range of 1.65 V–2.2 V),  
CC  
CC  
V
= 3 V (for V range of 2.2 V–3.6 V), and V = 5 V (for V range of 4.5 V–5.5 V), T = 25 °C.  
CC  
CC CC CC A  
5. Datasheet specifications are not guaranteed for V in the range of 3.6 V to 4.5 V.  
CC  
Cypress Semiconductor Corporation  
Document Number: 001-95420 Rev. *C  
198 Champion Court  
San Jose, CA 95134-1709  
408-943-2600  
Revised January 11, 2016  

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