CSD882ETUBE

更新时间： 2024-02-02 21:49:33

品牌	Logo	应用领域
CDIL		开关
页数	文件大小	规格书
3页	137K
描述
Small Signal Bipolar Transistor,

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技术参数
数据手册

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CSD882ETUBE 技术参数

生命周期：	Contact Manufacturer	Reach Compliance Code：	compliant
风险等级：	5.7	Is Samacsys：	N
Base Number Matches：	1

CSD882ETUBE 数据手册

Continental Device India Limited

An ISO/TS16949 and ISO 9001 Certified Company

NPN PLASTIC POWER TRANSISTOR

CSD882

TO126

Plastic Package

Complementary CSB772

Audio Frequency Power Amplifier and Low Speed Switching Applications

ABSOLUTE MAXIMUM RATINGS(Ta=25ºC unless specified otherwise)

DESCRIPTION

SYMBOL

V_CBO

V_CEO

V_EBO

I_C

VALUE

UNIT

Collector Base Voltage(open emitter)

Collector Emitter Voltage (open base)

>40

>30

Emitter Base Voltage(open collector)

Collector Current (DC)

>5.0

<3.0

I_C

Collector Current (Pulse)

I_B

Base Curent (DC)

<0.6

<1.0

<10

P_tot

Total Power Dissipation@ Ta=25ºC

Total Power Dissipation@ Tc=25ºC

Junction Temperature

P_tot

T_j

150

ºC

T_stg

Storage Temperature Range

-65 to +150

ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise)

DESCRIPTION

SYMBOL TEST CONDITION

MIN

TYP

MAX

1.0

UNIT

µA

I_CBO

I_EBO

I_E=0, V_CB=30V

I_C=0, V_EB=3V

Collector-Cut off Current

Emitter cut -off Current

Breakdown Voltages

1.0

V_CEOI_C=1mA, I_B=0

V_CBOI_C=1mA, I_E=0

I_C=0, I_E=1mA

I_C=2A, I_B=0.2A

V_EBO

V_{CE (sat)}

V_{BE (sat)}

h_FE*

Saturation Voltages

DC Current Gain

0.5

2.0

IC=2A, IB=0.2A

I_C=20mA,V_CE=2V

h_FE*

I_C=1A,V_CE=2V**

I_E=0, V_CB=10V,

I_C=0.1A, V_CE=5V

400

Output Capacitance at f=1MHz

Transition Frequency

f_T

MHz

* Pulse test : pulse width <350µs ; duty cycle <2%

**h_FEclassification : R : 60-120 Q: 100-200 P: 160-320 E: 200-400

Continental Device India Limited

Data Sheet

Page 1 of 3

12 3

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