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CSD-8MBKTIN/LEAD PDF预览

CSD-8MBKTIN/LEAD

更新时间: 2024-11-21 07:55:07
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CENTRAL /
页数 文件大小 规格书
2页 489K
描述
Silicon Controlled Rectifier, 8000mA I(T), 600V V(DRM)

CSD-8MBKTIN/LEAD 数据手册

 浏览型号CSD-8MBKTIN/LEAD的Datasheet PDF文件第2页 
CSD-8M  
CSD-8N  
www.centralsemi.com  
SURFACE MOUNT  
SILICON CONTROLLED RECTIFIERS  
8.0 AMP, 600 THRU 800 VOLT  
DESCRIPTION:  
The CENTRAL SEMICONDUCTOR CSD-8M and  
CSD-8N are epoxy molded SCRs designed for sensing  
circuit and control system applications.  
MARKING: FULL PART NUMBER  
DPAK CASE  
MAXIMUM RATINGS: (T =25°C unless otherwise noted)  
C
SYMBOL  
CSD-8M  
CSD-8N  
UNITS  
Peak Repetitive Off-State Voltage  
V
V
600  
800  
V
DRM, RRM  
RMS On-State Current (T =90°C)  
C
Peak One Cycle Surge, t=10ms  
I2t Value for Fusing, t=10ms  
I
8.0  
80  
A
A
A2s  
T(RMS)  
I
TSM  
I2t  
32  
Peak Gate Power, tp=10μs  
P
40  
W
GM  
Average Gate Power Dissipation  
Peak Forward Gate Current, tp=10μs  
Peak Forward Gate Voltage, tp=10μs  
Peak Reverse Gate Voltage, tp=10μs  
Critical Rate of Rise of On-State Current  
Operating Junction Temperature  
Storage Temperature  
P
1.0  
4.0  
16  
W
G(AV)  
I
A
FGM  
V
V
FGM  
V
5.0  
50  
V
RGM  
di/dt  
A/μs  
°C  
°C  
T
-40 to +125  
-40 to +150  
J
T
stg  
ELECTRICAL CHARACTERISTICS: (T =25°C unless otherwise noted)  
C
SYMBOL  
TEST CONDITIONS  
MIN  
TYP  
MAX  
UNITS  
I
I
I
I
I
Rated V  
V
10  
2.0  
15  
μA  
DRM, RRM  
DRM, RRM  
I
Rated V V T =125°C  
DRM, RRM, C  
mA  
mA  
mA  
V
DRM, RRM  
V =12V, R =10Ω  
3.0  
7.3  
0.9  
1.3  
GT  
H
D
L
I =100mA  
20  
T
V
V =12V, R =10Ω  
1.5  
1.8  
GT  
TM  
D
L
V
I
=16A, tp=380μs  
2
V
TM  
dv/dt  
V = / V  
T =125°C  
200  
V/μs  
3
D
DRM  
C
,
R2 (21-January 2013)  

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