Datasheet > 触发装置 > 可控硅整流器> CSD-8NBKTIN/LEAD

CSD-8NBKTIN/LEAD

更新时间： 2024-02-15 14:21:28

品牌	Logo	应用领域
CENTRAL		可控硅
页数	文件大小	规格书
2页	469K
描述
Silicon Controlled Rectifier, 8000mA I(T), 800V V(DRM)

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中文翻译

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技术参数
数据手册

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CSD-8NBKTIN/LEAD 技术参数

是否Rohs认证：	不符合	生命周期：	Active
包装说明：	,	Reach Compliance Code：	not_compliant
风险等级：	5.77	JESD-609代码：	e0
峰值回流温度（摄氏度）：	NOT SPECIFIED	端子面层：	Tin/Lead (Sn/Pb)
处于峰值回流温度下的最长时间：	NOT SPECIFIED	触发设备类型：	SCR
Base Number Matches：	1

CSD-8NBKTIN/LEAD 数据手册

CSD-8M

CSD-8N

www.centralsemi.com

SURFACE MOUNT

SILICON CONTROLLED RECTIFIER

8 AMP, 600 THRU 800 VOLTS

DESCRIPTION:

The CENTRAL SEMICONDUCTOR CSD-8M series

type is an Epoxy Molded Silicon Controlled Rectifier

designed for sensing circuit applications and control

systems.

MARKING: FULL PART NUMBER

DPAK THYRISTOR CASE

MAXIMUM RATINGS: (T =25°C unless otherwise noted)

SYMBOL

CSD-8M

CSD-8N UNITS

Peak Repetitive Off-State Voltage

600

800

DRM, RRM

RMS On-State Current (T =90°C)

Peak One Cycle Surge, t=10ms

I²t Value for Fusing, t=10ms

8.0

T(RMS)

TSM

I²t

A²s

Peak Gate Power, tp=10μs

Average Gate Power Dissipation

Peak Forward Gate Current, tp=10μs

Peak Forward Gate Voltage, tp=10μs

Peak Reverse Gate Voltage, tp=10μs

Critical Rate of Rise of On-State Current

Operating Junction Temperature

Storage Temperature

1.0

4.0

G(AV)

FGM

5.0

RGM

di/dt

A/μs

°C

-40 to +125

-40 to +150

stg

ELECTRICAL CHARACTERISTICS: (T =25°C unless otherwise noted)

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNITS

μA

Rated V V

DRM, RRM

Rated V

V T =125°C

2.0

DRM, RRM

DRM, RRM, C

V =12V, R =10Ω

3.0

7.3

0.9

1.3

I =100mA

V =12V, R =10Ω

1.5

1.8

=16A, tp=380μs

dv/dt

V = / V

T =125°C

200

V/μs

DRM

R1 (17-February 2010)

中文翻译

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