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CSD-8MTR13TIN/LEAD PDF预览

CSD-8MTR13TIN/LEAD

更新时间: 2024-11-20 15:45:23
品牌 Logo 应用领域
CENTRAL 栅极
页数 文件大小 规格书
2页 489K
描述
Silicon Controlled Rectifier, 8000mA I(T), 600V V(DRM)

CSD-8MTR13TIN/LEAD 技术参数

是否Rohs认证: 不符合生命周期:Active
Reach Compliance Code:unknown风险等级:5.83
关态电压最小值的临界上升速率:200 V/us最大直流栅极触发电流:15 mA
最大直流栅极触发电压:1.5 V最大维持电流:20 mA
JESD-609代码:e0最大漏电流:2 mA
通态非重复峰值电流:80 A最大通态电流:8000 A
最高工作温度:125 °C最低工作温度:-40 °C
断态重复峰值电压:600 V子类别:Silicon Controlled Rectifiers
表面贴装:YES端子面层:Tin/Lead (Sn/Pb)
触发设备类型:SCRBase Number Matches:1

CSD-8MTR13TIN/LEAD 数据手册

 浏览型号CSD-8MTR13TIN/LEAD的Datasheet PDF文件第2页 
CSD-8M  
CSD-8N  
www.centralsemi.com  
SURFACE MOUNT  
SILICON CONTROLLED RECTIFIERS  
8.0 AMP, 600 THRU 800 VOLT  
DESCRIPTION:  
The CENTRAL SEMICONDUCTOR CSD-8M and  
CSD-8N are epoxy molded SCRs designed for sensing  
circuit and control system applications.  
MARKING: FULL PART NUMBER  
DPAK CASE  
MAXIMUM RATINGS: (T =25°C unless otherwise noted)  
C
SYMBOL  
CSD-8M  
CSD-8N  
UNITS  
Peak Repetitive Off-State Voltage  
V
V
600  
800  
V
DRM, RRM  
RMS On-State Current (T =90°C)  
C
Peak One Cycle Surge, t=10ms  
I2t Value for Fusing, t=10ms  
I
8.0  
80  
A
A
A2s  
T(RMS)  
I
TSM  
I2t  
32  
Peak Gate Power, tp=10μs  
P
40  
W
GM  
Average Gate Power Dissipation  
Peak Forward Gate Current, tp=10μs  
Peak Forward Gate Voltage, tp=10μs  
Peak Reverse Gate Voltage, tp=10μs  
Critical Rate of Rise of On-State Current  
Operating Junction Temperature  
Storage Temperature  
P
1.0  
4.0  
16  
W
G(AV)  
I
A
FGM  
V
V
FGM  
V
5.0  
50  
V
RGM  
di/dt  
A/μs  
°C  
°C  
T
-40 to +125  
-40 to +150  
J
T
stg  
ELECTRICAL CHARACTERISTICS: (T =25°C unless otherwise noted)  
C
SYMBOL  
TEST CONDITIONS  
MIN  
TYP  
MAX  
UNITS  
I
I
I
I
I
Rated V  
V
10  
2.0  
15  
μA  
DRM, RRM  
DRM, RRM  
I
Rated V V T =125°C  
DRM, RRM, C  
mA  
mA  
mA  
V
DRM, RRM  
V =12V, R =10Ω  
3.0  
7.3  
0.9  
1.3  
GT  
H
D
L
I =100mA  
20  
T
V
V =12V, R =10Ω  
1.5  
1.8  
GT  
TM  
D
L
V
I
=16A, tp=380μs  
2
V
TM  
dv/dt  
V = / V  
T =125°C  
200  
V/μs  
3
D
DRM  
C
,
R2 (21-January 2013)  

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