CSD-8N

更新时间： 2024-11-20 04:12:51

品牌	Logo	应用领域
CENTRAL		/
页数	文件大小	规格书
2页	74K
描述
8.0 AMP SCR 600 THRU 800 VOLTS

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中文翻译

获取价格

数据手册

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CSD-8N 数据手册

Central

CSD-8M

CSD-8N

Semiconductor Corp.

8.0 AMP SCR

600 THRU 800 VOLTS

DESCRIPTION:

The CENTRAL SEMICONDUCTOR CSD-8M

series type is an Epoxy Molded Silicon Controlled

Rectifier designed for sensing circuit applications

and control systems.

MARKING CODE: FULL PART NUMBER

DPAK THYRISTOR CASE

MAXIMUM RATINGS: (T =25°C unless otherwise noted)

CSD

-8M

600

CSD

-8N

800

SYMBOL

UNITS

A²s

Peak Repetitive Off-State Voltage

DRM, RRM

RMS On-State Current (T =90°C)

8.0

T(RMS)

TSM

Peak One Cycle Surge (t=10ms)

I²t Value for Fusing (t=10ms)

I²t

Peak Gate Power (tp=10µs)

di/dt

G(AV)

FGM

RGM

Average Gate Power Dissipation

Peak Forward Gate Current (tp=10µs)

Peak Forward Gate Voltage (tp=10µs)

Peak Reverse Gate Voltage (tp=10µs)

Critical Rate of Rise of On-State Current

Storage Temperature

1.0

4.0

5.0

A/µs

°C

-40 to +150

-40 to +125

stg

Junction Temperature

ELECTRICAL CHARACTERISTICS: (T =25°C unless otherwise noted)

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

2.0

1.5

1.8

UNITS

µA

Rated V

DRM, RRM

, V T =125°C

DRM RRM, C

DRM, RRM

V =12V, R =10Ω

3.0

7.3

0.9

1.3

I =100mA

V =12V, R =10Ω

=16A, tp=380µs

V/µs

dv/dt

V = / V

T =125°C

DRM, C

200

R0 (20-May 2004)

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