TM
Central
CSD-8M
CSD-8N
Semiconductor Corp.
8.0 AMP SCR
600 THRU 800 VOLTS
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CSD-8M
series type is an Epoxy Molded Silicon Controlled
Rectifier designed for sensing circuit applications
and control systems.
MARKING CODE: FULL PART NUMBER
DPAK THYRISTOR CASE
MAXIMUM RATINGS: (T =25°C unless otherwise noted)
C
CSD
-8M
600
CSD
-8N
800
SYMBOL
UNITS
V
A
A
A2s
Peak Repetitive Off-State Voltage
V
V
DRM, RRM
RMS On-State Current (T =90°C)
I
I
8.0
80
32
C
T(RMS)
TSM
Peak One Cycle Surge (t=10ms)
I2t Value for Fusing (t=10ms)
I2t
Peak Gate Power (tp=10µs)
P
P
I
V
V
di/dt
40
W
W
A
V
GM
G(AV)
FGM
FGM
RGM
Average Gate Power Dissipation
Peak Forward Gate Current (tp=10µs)
Peak Forward Gate Voltage (tp=10µs)
Peak Reverse Gate Voltage (tp=10µs)
Critical Rate of Rise of On-State Current
Storage Temperature
1.0
4.0
16
5.0
50
V
A/µs
°C
°C
T
T
-40 to +150
-40 to +125
stg
J
Junction Temperature
ELECTRICAL CHARACTERISTICS: (T =25°C unless otherwise noted)
C
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
10
2.0
15
20
1.5
1.8
UNITS
µA
mA
mA
mA
V
I
I
I
I
V
V
I
I
Rated V
Rated V
V
DRM, RRM
DRM, RRM
, V T =125°C
DRM RRM, C
DRM, RRM
V =12V, R =10Ω
3.0
7.3
0.9
1.3
GT
H
GT
TM
D
T
L
I =100mA
V =12V, R =10Ω
D
L
I
=16A, tp=380µs
2
V
V/µs
TM
dv/dt
V = / V
T =125°C
DRM, C
200
3
D
R0 (20-May 2004)