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CSD-8M_10 PDF预览

CSD-8M_10

更新时间: 2024-11-20 09:33:51
品牌 Logo 应用领域
CENTRAL 可控硅
页数 文件大小 规格书
2页 469K
描述
SURFACE MOUNT SILICON CONTROLLED RECTIFIER 8 AMP, 600 THRU 800 VOLTS

CSD-8M_10 数据手册

 浏览型号CSD-8M_10的Datasheet PDF文件第2页 
CSD-8M  
CSD-8N  
www.centralsemi.com  
SURFACE MOUNT  
SILICON CONTROLLED RECTIFIER  
8 AMP, 600 THRU 800 VOLTS  
DESCRIPTION:  
The CENTRAL SEMICONDUCTOR CSD-8M series  
type is an Epoxy Molded Silicon Controlled Rectifier  
designed for sensing circuit applications and control  
systems.  
MARKING: FULL PART NUMBER  
DPAK THYRISTOR CASE  
MAXIMUM RATINGS: (T =25°C unless otherwise noted)  
SYMBOL  
CSD-8M  
CSD-8N UNITS  
C
Peak Repetitive Off-State Voltage  
V
V
600  
800  
V
A
DRM, RRM  
I
RMS On-State Current (T =90°C)  
C
Peak One Cycle Surge, t=10ms  
I2t Value for Fusing, t=10ms  
8.0  
80  
T(RMS)  
I
A
TSM  
I2t  
32  
A2s  
W
W
A
Peak Gate Power, tp=10μs  
P
40  
GM  
Average Gate Power Dissipation  
Peak Forward Gate Current, tp=10μs  
Peak Forward Gate Voltage, tp=10μs  
Peak Reverse Gate Voltage, tp=10μs  
Critical Rate of Rise of On-State Current  
Operating Junction Temperature  
Storage Temperature  
P
1.0  
4.0  
16  
G(AV)  
I
FGM  
V
V
FGM  
V
5.0  
50  
V
RGM  
di/dt  
A/μs  
°C  
°C  
T
-40 to +125  
-40 to +150  
J
T
stg  
ELECTRICAL CHARACTERISTICS: (T =25°C unless otherwise noted)  
C
SYMBOL  
TEST CONDITIONS  
MIN  
TYP  
MAX  
10  
UNITS  
μA  
I
I
I
I
I
Rated V V  
DRM, RRM  
DRM, RRM  
I
Rated V  
V T =125°C  
2.0  
15  
mA  
mA  
mA  
V
DRM, RRM  
DRM, RRM, C  
V =12V, R =10Ω  
3.0  
7.3  
0.9  
1.3  
GT  
H
D
L
I =100mA  
20  
T
V
V =12V, R =10Ω  
1.5  
1.8  
GT  
TM  
D
L
V
I
=16A, tp=380μs  
2
V
TM  
dv/dt  
V = / V  
T =125°C  
200  
V/μs  
3
D
DRM  
C
,
R1 (17-February 2010)  

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