Datasheet > CSD-8M_10

CSD-8M_10

更新时间： 2022-10-22 15:59:43

品牌	Logo	应用领域
CENTRAL		可控硅
页数	文件大小	规格书
2页	469K
描述
SURFACE MOUNT SILICON CONTROLLED RECTIFIER 8 AMP, 600 THRU 800 VOLTS

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数据手册

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CSD-8M_10 数据手册

CSD-8M

CSD-8N

www.centralsemi.com

SURFACE MOUNT

SILICON CONTROLLED RECTIFIER

8 AMP, 600 THRU 800 VOLTS

DESCRIPTION:

The CENTRAL SEMICONDUCTOR CSD-8M series

type is an Epoxy Molded Silicon Controlled Rectifier

designed for sensing circuit applications and control

systems.

MARKING: FULL PART NUMBER

DPAK THYRISTOR CASE

MAXIMUM RATINGS: (T =25°C unless otherwise noted)

SYMBOL

CSD-8M

CSD-8N UNITS

Peak Repetitive Off-State Voltage

600

800

DRM, RRM

RMS On-State Current (T =90°C)

Peak One Cycle Surge, t=10ms

I²t Value for Fusing, t=10ms

8.0

T(RMS)

TSM

I²t

A²s

Peak Gate Power, tp=10μs

Average Gate Power Dissipation

Peak Forward Gate Current, tp=10μs

Peak Forward Gate Voltage, tp=10μs

Peak Reverse Gate Voltage, tp=10μs

Critical Rate of Rise of On-State Current

Operating Junction Temperature

Storage Temperature

1.0

4.0

G(AV)

FGM

5.0

RGM

di/dt

A/μs

°C

-40 to +125

-40 to +150

stg

ELECTRICAL CHARACTERISTICS: (T =25°C unless otherwise noted)

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNITS

μA

Rated V V

DRM, RRM

Rated V

V T =125°C

2.0

DRM, RRM

DRM, RRM, C

V =12V, R =10Ω

3.0

7.3

0.9

1.3

I =100mA

V =12V, R =10Ω

1.5

1.8

=16A, tp=380μs

dv/dt

V = / V

T =125°C

200

V/μs

DRM

R1 (17-February 2010)

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