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CSD882PTUBE PDF预览

CSD882PTUBE

更新时间: 2024-11-24 12:59:11
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3页 137K
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CSD882PTUBE 数据手册

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Continental Device India Limited  
An ISO/TS16949 and ISO 9001 Certified Company  
NPN PLASTIC POWER TRANSISTOR  
CSD882  
TO126  
Plastic Package  
E
C
B
Complementary CSB772  
Audio Frequency Power Amplifier and Low Speed Switching Applications  
ABSOLUTE MAXIMUM RATINGS(Ta=25ºC unless specified otherwise)  
DESCRIPTION  
SYMBOL  
VCBO  
VCEO  
VEBO  
IC  
VALUE  
UNIT  
Collector Base Voltage(open emitter)  
Collector Emitter Voltage (open base)  
>40  
>30  
V
V
Emitter Base Voltage(open collector)  
Collector Current (DC)  
>5.0  
<3.0  
<7  
V
A
IC  
Collector Current (Pulse)  
A
IB  
Base Curent (DC)  
<0.6  
<1.0  
<10  
A
Ptot  
Total Power Dissipation@ Ta=25ºC  
Total Power Dissipation@ Tc=25ºC  
Junction Temperature  
W
W
Ptot  
Tj  
150  
ºC  
ºC  
Tstg  
Storage Temperature Range  
-65 to +150  
ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise)  
DESCRIPTION  
SYMBOL TEST CONDITION  
MIN  
TYP  
MAX  
1.0  
UNIT  
µA  
µA  
ICBO  
IEBO  
IE =0, VCB =30V  
IC =0, VEB =3V  
Collector-Cut off Current  
Emitter cut -off Current  
Breakdown Voltages  
1.0  
VCEO IC =1mA, IB =0  
VCBO IC =1mA, IE =0  
30  
40  
5
V
V
V
V
V
IC =0, IE =1mA  
IC=2A, IB=0.2A  
VEBO  
VCE (sat)  
VBE (sat)  
hFE*  
Saturation Voltages  
DC Current Gain  
*
*
0.5  
2.0  
IC=2A, IB=0.2A  
IC=20mA,VCE=2V  
30  
60  
hFE*  
IC=1A,VCE=2V**  
IE =0, VCB =10V,  
IC=0.1A, VCE=5V  
400  
Output Capacitance at f=1MHz  
Transition Frequency  
Co  
fT  
45  
90  
pF  
MHz  
* Pulse test : pulse width <350µs ; duty cycle <2%  
**hFE classification : R : 60-120 Q: 100-200 P: 160-320 E: 200-400  
Continental Device India Limited  
Data Sheet  
Page 1 of 3  

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