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CMPT5088ELEADFREE PDF预览

CMPT5088ELEADFREE

更新时间: 2024-09-21 18:32:43
品牌 Logo 应用领域
CENTRAL 光电二极管晶体管
页数 文件大小 规格书
2页 329K
描述
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, PLASTIC PACKAGE-3

CMPT5088ELEADFREE 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active包装说明:SMALL OUTLINE, R-PDSO-G3
针数:3Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.21.00.95
风险等级:5.19其他特性:LOW NOISE
最大集电极电流 (IC):0.1 A集电极-发射极最大电压:50 V
配置:SINGLE最小直流电流增益 (hFE):50
JESD-30 代码:R-PDSO-G3JESD-609代码:e3
湿度敏感等级:1元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
极性/信道类型:NPN认证状态:Not Qualified
表面贴装:YES端子面层:MATTE TIN (315)
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:10晶体管元件材料:SILICON
标称过渡频率 (fT):100 MHzBase Number Matches:1

CMPT5088ELEADFREE 数据手册

 浏览型号CMPT5088ELEADFREE的Datasheet PDF文件第2页 
CMPT5087E PNP  
CMPT5088E NPN  
www.centralsemi.com  
ENHANCED SPECIFICATION  
SURFACE MOUNT  
DESCRIPTION:  
COMPLEMENTARY  
SILICON TRANSISTORS  
The CENTRAL SEMICONDUCTOR CMPT5087E  
and CMPT5088E, are Silicon transistors in an epoxy  
molded surface mount package with enhanced  
specifications designed for applications requiring high  
gain and low noise.  
MARKING CODES: CMPT5087E: C2QE  
CMPT5088E: C1QE  
SOT-23 CASE  
MAXIMUM RATINGS: (T =25°C)  
Collector-Base Voltage  
SYMBOL  
UNITS  
V
V
A
V
V
V
50  
50  
5.0  
100  
350  
CBO  
CEO  
EBO  
Collector-Emitter Voltage  
Emitter-Base Voltage  
V
Continuous Collector Current  
Power Dissipation  
I
P
mA  
mW  
°C  
C
D
Operating and Storage Junction Temperature  
Thermal Resistance  
T , T  
stg  
-65 to +150  
357  
J
Θ
°C/W  
JA  
ELECTRICAL CHARACTERISTICS: (T =25°C unless otherwise noted)  
TYP  
A
SYMBOL  
TEST CONDITIONS  
MIN  
NPN PNP  
MAX  
50  
UNITS  
nA  
nA  
V
I
I
V
V
=20V  
CBO  
EBO  
CB  
EB  
=3.0V  
50  
BV  
BV  
BV  
I =100µA  
50  
50  
135 150  
CBO  
CEO  
C
I =1.0mA  
65  
8.7  
45  
105  
7.5  
50  
V
C
I =100µA  
5.0  
V
EBO  
E
V
I =10mA, I =1.0mA  
100  
400  
800  
900  
mV  
mV  
mV  
CE(SAT)  
C
B
I =100mA, I =10mA  
110 225  
700 700  
430 390  
435 380  
430 350  
♦♦ VVCE(SAT)  
C
B
I =10mA, I =1.0mA  
BE(SAT)  
C
B
h
V
=5.0V, I =0.1mA  
300  
300  
300  
50  
FE  
CE  
CE  
CE  
CE  
CE  
CB  
BE  
CE  
CE  
C
h
V
V
V
V
V
V
V
V
=5.0V, I =1.0mA  
FE  
C
h
=5.0V, I =10mA  
C
FE  
=5.0V, I =100mA  
125  
75  
♦♦ fhFE  
C
=5.0V, I =500µA, f=20MHz  
100  
MHz  
pF  
T
C
C
=5.0V, I =0, f=1.0MHz  
4.0  
15  
ob  
E
C
=0.5V, I =0, f=1.0MHz  
pF  
ib  
C
h
=5.0V, I =1.0mA, f=1.0kHz  
350  
1400  
dB  
fe  
C
NF  
=5.0V, I =100μA, R =10kΩ f=10Hz to 15.7kHz  
3.0  
C
S
Enhanced specification  
♦♦ Additional Enhanced specification  
R1 (1-February 2010)  

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