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CMPT5179

更新时间: 2024-11-07 22:40:15
品牌 Logo 应用领域
CENTRAL 晶体晶体管
页数 文件大小 规格书
2页 81K
描述
NPN SILICON RF TRANSISTOR

CMPT5179 数据手册

 浏览型号CMPT5179的Datasheet PDF文件第2页 
TM  
Ce n t r a l  
CMPT5179  
S e m ic o n d u c t o r Co r p .  
NPN SILICON RF TRANSISTOR  
DESCRIPTION:  
The CENTRAL SEMICONDUCTOR  
CMPT5179typeisanNPNsiliconRFtransistor  
manufactured by the epitaxial planar process,  
epoxy molded in a surface mount package,  
designed for low noise, high frequency  
amplifier and high output oscillator  
applications.  
Marking code is C7H.  
SOT-23 CASE  
o
MAXIMUM RATINGS (T =25 C)  
A
SYMBOL  
UNITS  
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Collector Current  
V
V
V
20  
12  
2.5  
50  
V
V
V
mA  
mW  
CBO  
CEO  
EBO  
I
P
C
Power Dissipation  
350  
D
Operating and Storage  
Junction Temperature  
Thermal Resistance  
o
o
T ,T  
-65 to +150  
357  
C
C/W  
J stg  
Θ
JA  
o
ELECTRICAL CHARACTERISTICS (T =25 C unless otherwise noted)  
A
SYMBOL  
TEST CONDITIONS  
=15V  
MIN  
TYP  
MAX  
20  
UNITS  
nA  
V
I
V
CBO  
CB  
BV  
BV  
BV  
V
V
h
f
C
I =10µA  
20  
12  
2.5  
CBO  
CEO  
EBO  
CE(SAT)  
BE(SAT)  
FE  
T
cb  
C
I =3.0mA  
V
V
V
V
C
I =10µA  
E
I =10mA, I =1.0mA  
0.4  
1.0  
C
C
B
B
I =10mA, I =1.0mA  
V
=1.0V, I =3.0mA  
25  
900  
CE  
CE  
CB  
CE  
CE  
CE  
C
V
V
V
V
V
=6.0V, I =5.0mA, f=100MHz  
C
1450  
MHz  
pF  
=10V, I =0, f=0.1 to 1.0MHz  
1.0  
4.5  
E
h
G
=6.0V, I =2.0, f=1.0kHz  
C
25  
15  
fe  
pe  
=6.0V, I =5.0mA, f=200MHz  
dB  
dB  
C
NF  
=6.0V, I =1.5mA, R =50, f=200MHz  
C
S
182  

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