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CMPT5179BKPBFREE PDF预览

CMPT5179BKPBFREE

更新时间: 2024-11-11 09:22:55
品牌 Logo 应用领域
CENTRAL /
页数 文件大小 规格书
2页 323K
描述
Transistor,

CMPT5179BKPBFREE 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:,Reach Compliance Code:compliant
风险等级:5.61最大集电极电流 (IC):0.05 A
配置:Single最小直流电流增益 (hFE):25
最高工作温度:150 °C极性/信道类型:NPN
最大功率耗散 (Abs):0.35 W子类别:Other Transistors
表面贴装:YES标称过渡频率 (fT):900 MHz
Base Number Matches:1

CMPT5179BKPBFREE 数据手册

 浏览型号CMPT5179BKPBFREE的Datasheet PDF文件第2页 
CMPT5179  
www.centralsemi.com  
SURFACE MOUNT  
NPN SILICON RF TRANSISTOR  
DESCRIPTION:  
The CENTRAL SEMICONDUCTOR CMPT5179 type  
is an NPN silicon RF transistor manufactured by the  
epitaxial planar process, epoxy molded in a surface  
mount package, designed for low noise, high frequency  
amplifier and high output oscillator applications.  
MARKING CODE: C7H  
SOT-23 CASE  
MAXIMUM RATINGS: (T =25°C)  
SYMBOL  
UNITS  
V
A
Collector-Base Voltage  
V
V
V
20  
15  
CBO  
CEO  
EBO  
Collector-Emitter Voltage  
Emitter-Base Voltage  
V
2.5  
V
Continuous Collector Current  
Power Dissipation  
I
50  
mA  
mW  
°C  
C
P
350  
D
Operating and Storage Junction Temperature  
Thermal Resistance  
T , T  
-65 to +150  
357  
J
stg  
Θ
°C/W  
JA  
ELECTRICAL CHARACTERISTICS: (T =25°C unless otherwise noted)  
A
SYMBOL  
TEST CONDITIONS  
=15V  
MIN  
TYP  
MAX  
UNITS  
I
V
20  
nA  
V
CBO  
CB  
I =10μA  
BV  
BV  
BV  
20  
15  
CBO  
CEO  
C
I =3.0mA  
V
C
I =10μA  
2.5  
V
EBO  
E
V
V
I =10mA, I =1.0mA  
0.4  
1.0  
V
CE(SAT)  
BE(SAT)  
FE  
C
B
I =10mA, I =1.0mA  
V
C
B
h
V
=1.0V, I =3.0mA  
25  
CE  
CE  
CB  
CE  
CE  
CE  
C
f
V
V
V
V
V
=6.0V, I =5.0mA, f=100MHz  
900  
1450  
MHz  
pF  
T
C
C
=10V, I =0, f=1.0MHz  
1.0  
cb  
fe  
E
h
=6.0V, I =2.0mA, f=1.0kHz  
25  
C
G
=6.0V, I =5.0mA, f=200MHz  
15  
dB  
dB  
pe  
NF  
C
=6.0V, I =1.5mA, R =50Ω, f=200MHz  
4.5  
C
S
R6 (1-February 2010)  

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