Datasheet > CMPT5401EBKPBFREE

CMPT5401EBKPBFREE

更新时间： 2024-09-22 07:20:55

品牌	Logo	应用领域
CENTRAL		/
页数	文件大小	规格书
2页	329K
描述
Transistor,

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中文翻译

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技术参数
数据手册

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CMPT5401EBKPBFREE 技术参数

是否Rohs认证：	符合	生命周期：	Obsolete
包装说明：	,	Reach Compliance Code：	compliant
风险等级：	5.84	最大集电极电流 (IC)：	0.6 A
配置：	Single	最小直流电流增益 (hFE)：	60
最高工作温度：	150 °C	极性/信道类型：	PNP
最大功率耗散 (Abs)：	0.35 W	子类别：	Other Transistors
表面贴装：	YES	标称过渡频率 (fT)：	100 MHz

CMPT5401EBKPBFREE 数据手册

CMPT5401E

www.centralsemi.com

ENHANCED SPECIFICATION

SURFACE MOUNT

PNP SILICON TRANSISTOR

DESCRIPTION:

The CENTRAL SEMICONDUCTOR CMPT5401E is an

PNP Silicon Transistor, packaged in an SOT-23 case,

designed for general purpose amplifier applications

requiring high breakdown voltage and small space

saving packaging.

MARKING CODE: C540

FEATURES:

• High Collector Breakdown Voltage 250V

• Low Leakage Current 50nA Max

• Low Saturation Voltage 150mV Max @ 50mA

• Complementary Device CMPT5551E

• SOT-23 Surface Mount Package

SOT-23 CASE

APPLICATIONS:

• General purpose switching and amplification

• Telephone applications

MAXIMUM RATINGS: (T =25°C)

SYMBOL

UNITS

♦

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

250

220

CBO

CEO

EBO

7.0

Continuous Collector Current

Power Dissipation

600

°C

350

Operating and Storage Junction Temperature

Thermal Resistance

T , T

-65 to +150

357

stg

°C/W

ELECTRICAL CHARACTERISTICS: (T =25°C unless otherwise noted)

SYMBOL

TEST CONDITIONS

MIN

MAX

UNITS

μA

=120V

CBO

EBO

=120V, T =100°C

=3.0V

♦

I =100µA

250

220

7.0

CBO

I =1.0mA

CEO

I =10µA

EBO

I =10mA, I =1.0mA

100

150

CE(SAT)

BE(SAT)

I =50mA, I =5.0mA

I =10mA, I =1.0mA

1.00

I =50mA, I =5.0mA

=5.0V, I =1.0mA

100

♦

=5.0V, I =10mA

300

=5.0V, I =50mA

=10V, I =150mA

♦ Enhanced specification

R1 (1-February 2010)

中文翻译

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