Datasheet > CMPT5401_10

CMPT5401_10

更新时间： 2024-09-21 09:27:43

品牌	Logo	应用领域
CENTRAL		晶体晶体管
页数	文件大小	规格书
2页	324K
描述
SURFACE MOUNT PNP SILICON TRANSISTOR

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中文翻译

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数据手册

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CMPT5401_10 数据手册

CMPT5401

www.centralsemi.com

SURFACE MOUNT

PNP SILICON TRANSISTOR

DESCRIPTION:

The CENTRAL SEMICONDUCTOR CMPT5401

type is a PNP silicon transistor manufactured by the

epitaxial planar process, epoxy molded in a surface

mount package, designed for high voltage amplifier

applications.

MARKING CODE: C2L

SOT-23 CASE

MAXIMUM RATINGS: (T =25°C)

SYMBOL

UNITS

Collector-Base Voltage

160

150

CBO

CEO

EBO

Collector-Emitter Voltage

Emitter-Base Voltage

5.0

Continuous Collector Current

Power Dissipation

600

°C

350

Operating and Storage Junction Temperature

Thermal Resistance

T , T

-65 to +150

357

stg

°C/W

ELECTRICAL CHARACTERISTICS: (T =25°C unless otherwise noted)

SYMBOL

TEST CONDITIONS

MIN

MAX

UNITS

μA

=120V

CBO

EBO

=120V, T =100°C

=3.0V

I =100μA

160

150

5.0

CBO

CEO

I =1.0mA

I =10μA

EBO

I =10mA, I =1.0mA

0.2

0.5

1.0

CE(SAT)

BE(SAT)

I =50mA, I =5.0mA

I =10mA, I =1.0mA

I =50mA, I =5.0mA

=5.0V, I =1.0mA

=5.0V, I =10mA

240

=5.0V, I =50mA

=10V, I =10mA, f=100MHz

100

300

6.0

MHz

=10V, I =0, f=1.0MHz

=10V, I =1.0mA, f=1.0kHz

200

=5.0V, I =250μA, R =1.0kΩ,

C S

f=10Hz to 15.7kHz

8.0

R6 (1-February 2010)

中文翻译

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与CMPT5401_10相关器件

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CMPT5401EBK	CENTRAL	获取价格	Small Signal Bipolar Transistor, 0.6A I(C), 220V V(BR)CEO, 1-Element, PNP, Silicon, ROHS C
CMPT5401EBKLEADFREE	CENTRAL	获取价格	Transistor
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CMPT5401ETR	CENTRAL	获取价格	Small Signal Bipolar Transistor, 0.6A I(C), 220V V(BR)CEO, 1-Element, PNP, Silicon, ROHS C
CMPT5401ETR13	CENTRAL	获取价格	Transistor
CMPT5401ETR13PBFREE	CENTRAL	获取价格	Transistor,
CMPT5401LEADFREE	CENTRAL	获取价格	Small Signal Bipolar Transistor, 0.6A I(C), 150V V(BR)CEO, 1-Element, PNP, Silicon, PLASTI
CMPT5401PBFREE	CENTRAL	获取价格	Small Signal Bipolar Transistor,
CMPT5401TR	CENTRAL	获取价格	暂无描述