Datasheet > CGHV14800

CGHV14800

更新时间： 2024-03-03 10:08:44

品牌	Logo	应用领域
MACOM		/
页数	文件大小	规格书
10页	624K
描述
800 W; 1200 - 1400 MHz; GaN HEMT for L - Band Radar Systems

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数据手册

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CGHV14800 数据手册

CGHV14800

Typical Pulsed Performance

60.5

60.0

59.5

59.0

58.5

58.0

57.5

100

PP_Ss_Aa_Tt

PoOUuTt at Fixed Pin=44.5dBm

DDrEaiant PEfsfaatt P_SAT

DDrEaiant FEifxfeadtPFPiixne=d44PdB=m44dBm

1.00

1.10

1.20

1.30

1.40

1.50

1.60

Frequency (GHz)

Figure 1. Saturated Output Power and Drain Efficiency vs Frequency

of the CGHV14800F in the CGHV14800F-AMP

V_DD= 50 V, I_DQ= 800 mA, Pulse Width = 100µs, Duty Cycle = 5%

-5

-10

-15

-20

S21

S11

S22

1.00

1.10

1.20

1.30

1.40

1.50

1.60

Frequency (GHz)

Figure 2. Small Signal Gain and Return Losses vs Frequency

of the CGHV14800F in the CGHV14800F-AMP

V_DD= 50 V, I_DQ= 800 mA

MACOM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.

Visit www.macom.com for additional data sheets and product information.

Rev. 2.5, 2022-12-2

For further information and support please visit:

https://www.macom.com/support

1 234 5 6 7...10

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与CGHV14800相关器件

型号	品牌	获取价格	描述	数据表
CGHV14800F	CREE	获取价格	800 W, 1200 - 1400 MHz, 50 V, GaN HEMT for L-Band Radar Systems
CGHV14800F-AMP	CREE	获取价格	800 W, 1200 - 1400 MHz, 50 V, GaN HEMT for L-Band Radar Systems
CGHV14800P	CREE	获取价格	RF Power Field-Effect Transistor, 1-Element, L Band, Gallium Nitride, N-Channel, High Elec
CGHV14800-TB	CREE	获取价格	800 W, 1200 - 1400 MHz, 50 V, GaN HEMT for L-Band Radar Systems
CGHV1A250	MACOM	获取价格	8.8 - 9.6 GHz, 300 W, 45 V, Packaged GaN Transistor
CGHV1F006	MACOM	获取价格	6 W; DC - 15.0 GHz; 40 V; GaN HEMT
CGHV1F006S	CREE	获取价格	6 W, DC - 18 GHz, 40V, GaN HEMT
CGHV1F006S-AMP1	CREE	获取价格	6 W, DC - 18 GHz, 40V, GaN HEMT
CGHV1F006S-AMP2	CREE	获取价格	6 W, DC - 18 GHz, 40V, GaN HEMT
CGHV1F006S-AMP3	CREE	获取价格	6 W, DC - 18 GHz, 40V, GaN HEMT