Datasheet > CGHV22200

CGHV22200

更新时间： 2022-02-26 10:57:26

品牌	Logo	应用领域
科锐 - CREE		LTE
页数	文件大小	规格书
13页	1096K
描述
200 W, 1800-2200 MHz, GaN HEMT for LTE

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CGHV22200 数据手册

CGHV22200

200 W, 1800-2200 MHz, GaN HEMT for LTE

Cree’s CGHV22200 is a gallium nitride (GaN) high electron mobility transistor (HEMT)

is designed speciﬁcally for high efﬁciency, high gain and wide bandwidth capabilities,

which makes the CGHV22200F ideal for 1.8 - 2.2 GHz LTE, 4G Telecom and BWA

ampliﬁer applications. The transistor is input matched and supplied in a ceramic/

metal ﬂange package.

Typical Performance Over 1.8 - 2.2 GHz (T_C= 25˚C) of Demonstration Ampliﬁer

Parameter

1.8 GHz

2.0 GHz

2.2 GHz

Units

Gain @ 47 dBm

16.6

19.2

18.1

ACLR @ 47 dBm

Drain Efﬁciency @ 47 dBm

Note:

-37.4

31.5

-37.4

31.9

-35.6

34.8

dBc

Measured in the CGHV22200-AMP ampliﬁer circuit, under WCDMA 3GPP test model 1, 64 DPCH, 45% clipping,

PAR = 7.5 dB @ 0.01% Probability on CCDF. I_DS= 1.0 A

Features

•

1.8 - 2.2 GHz Operation

18 dB Gain

-35 dBc ACLR at 50 W P_AVE

31-35 % Efﬁciency at 50 W P_AVE

High Degree of DPD Correction Can be Applied

Subject to change without notice.

www.cree.com/rf

12 3 4 5 6 7...13

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