Datasheet > CGHV27030S-AMP2

CGHV27030S-AMP2

更新时间： 2024-01-31 22:35:34

品牌	Logo	应用领域
科锐 - CREE		/
页数	文件大小	规格书
28页	3084K
描述
30 W, DC - 6.0 GHz, GaN HEMT

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CGHV27030S-AMP2 数据手册

CGHV27030S

30 W, DC - 6.0 GHz, GaN HEMT

TheCGHV27030Sisanunmatched,galliumnitride(GaN)highelectronmobilitytransistor(HEMT)

which offers high efﬁciency, high gain and wide bandwidth capabilities. The CGHV27030S GaN

HEMT devices are ideal for telecommunications applications with frequencies of 700-960

MHz, 1200-1400 MHz, 1800-2200 MHz, 2500-2700 MHz, and 3300-3700 MHz at both 50 V

and 28 V operations. The CGHV27030S is also ideal for tactical communications applications

operating from 20-2500 MHz, including land mobile radios. Additional applications include L-Band

RADAR and S-Band RADAR. The CGHV27030S can operate with either a 50 V or 28 V rail. The transistor is available in a

3mm x 4mm, surface mount, dual-ﬂat-no-lead (DFN) package.

Typical Performance 2.5-2.7 GHz (T_C= 25˚C) , 50 V

Parameter

2.5 GHz

2.6 GHz

2.7 GHz

Units

Small Signal Gain

23.0

22.0

21.4

Adjacent Channel Power @ P_OUT=5 W

Drain Efﬁciency @ P_OUT= 5 W

Input Return Loss

-34.5

29.5

13.4

-36.5

31.5

9.5

-37.0

32.9

10.4

dBc

Note:

Measured in the CGHV27030S-AMP1 application circuit, under 7.5 dB PAR single carrier WCDMA signal test model 1 with 64 DPCH.

Features for 50 V in CGHV27030S-AMP1

•

2.5 - 2.7 GHz Operation

30 W Typical Output Power

21 dB Gain at 5 W P_AVE

-36 dBc ACLR at 5 W P_AVE

32% efﬁciency at 5 W P_AVE

High degree of APD and DPD correction can be applied

Listing of Available Hardware Application Circuits / Demonstration Circuits

Application Circuit

CGHV27030S-AMP1

CGHV27030S-AMP2

CGHV27030S-AMP3

CGHV27030S-AMP4

CGHV27030S-AMP5

Operating Frequency

2.5 - 2.7 GHz

Ampliﬁer Class

Class A/B

Operating Voltage

50 V

28 V

50 V

2.5 - 2.7 GHz

1.8 - 2.2 GHz

1.2 - 1.4 GHz

Subject to change without notice.

www.cree.com/RF

12 3 4 5 6 7...28

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CGHV27030S-AMP5	CREE	获取价格	30 W, DC - 6.0 GHz, GaN HEMT
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