Datasheet > CGHV1F006S-TR

CGHV1F006S-TR

更新时间： 2022-02-26 10:44:03

品牌	Logo	应用领域
科锐 - CREE		/
页数	文件大小	规格书
22页	5739K
描述
6 W, DC - 18 GHz, 40V, GaN HEMT

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CGHV1F006S-TR 数据手册

CGHV1F006S

6 W, DC - 18 GHz, 40V, GaN HEMT

Cree’s CGHV1F006S is an unmatched, gallium nitride (GaN) high electron mobility transistor

(HEMT) designed speciﬁcally for high efﬁciency, high gain and wide bandwidth capabilities.

The device can be deployed for L, S, C, X and Ku-Band ampliﬁer applications. The datasheet

speciﬁcations are based on a C-Band (5.5 - 6.5 GHz) ampliﬁer. Additional application

circuits are available for C-Band at 5.8 GHz - 7.2 GHz and X-Band at 7.9 - 8.4 GHz and 8.5 -

9.6 GHz. The CGHV1F006S operates on a 40 volt rail circuit while housed in a 3mm x 4mm,

surface mount, dual-ﬂat-no-lead (DFN) package. Under reduced power, the transistor can

operate below 40V to as low as 20V V_DD,maintaining high gain and efﬁciency.

Typical Performance 5.5-6.5 GHz (T_C= 25˚C) , 40 V

Parameter

5.5 GHz

6.0 GHz

6.5 GHz

Units

Small Signal Gain

15.4

16.5

17.8

Output Power @ P_IN= 28 dBm

Drain Efﬁciency @ P_IN= 28 dBm

Note:

38.6

39.3

39.0

dBm

Measured in the CGHV1F006S-AMP application circuit. Pulsed 100 µs 10% duty.

Features for 40 V in CGHV1F006S-AMP

•

Up to 18 GHz Operation

8 W Typical Output Power

17 dB Gain at 6.0 GHz

15 dB Gain at 9.0 GHz

Application circuits for 5.8 - 7.2 GHz, 7.9 - 8.4 GHz, and 8.5 - 9.6 GHz.

High degree of APD and DPD correction can be applied

Listing of Available Hardware Application Circuits / Demonstration Circuits

Application Circuit

CGHV1F006S-AMP1

CGHV1F006S-AMP2

CGHV1F006S-AMP3

CGHV1F006S-AMP4

Operating Frequency

5.85 - 7.2 GHz

7.9 - 8.4 GHz

Ampliﬁer Class

Class A/B

Operating Voltage

40 V

20 V

Class A/B

8.5 - 9.6 GHz

Class A/B

4.9 - 5.9 GHz

Class A/B

Subject to change without notice.

www.cree.com/rf

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