Datasheet > CGHV14800F-AMP

CGHV14800F-AMP

更新时间： 2022-02-26 11:43:28

品牌	Logo	应用领域
科锐 - CREE		/
页数	文件大小	规格书
9页	765K
描述
800 W, 1200 - 1400 MHz, 50 V, GaN HEMT for L-Band Radar Systems

阅读下载

获取价格

如果您发现信息不准确，欢迎纠错

CGHV14800F-AMP 数据手册

CGHV14800

800 W, 1200 - 1400 MHz, 50 V, GaN HEMT for L-Band Radar Systems

Cree’s CGHV14800 is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed

speciﬁcally with high efﬁciency, high gain and wide bandwidth capabilities, which makes the

CGHV14800 ideal for 1.2 - 1.4 GHz pulsed L-Band radar ampliﬁer applications, such as air trafﬁc

control (ATC) radar, weather radar, penetration radars, antimissile system radars, target tracking

radars and long range survelliance radars. The GaN HEMT typically operates at 50 V, typically

deliverying >65% drain efﬁciency. The package options are ceramic/metal ﬂange package.

Typical Performance Over 1.2-1.4 GHz ^(T_C^{= 25˚C)}of Demonstration Ampliﬁer

Parameter

1.2 GHz

1.25 GHz

1.3 GHz

1.35 GHz

1.4 GHz

Units

Output Power

900

870

920

Power Gain

Drain Efﬁciency

Note:

14.5

14.0

Measured in the CGHV14800-AMP ampliﬁer circuit, under 3 μs pulse width, 3% duty cycle, P_IN= 45 dBm.

Features

•

Reference design ampliﬁer 1.2 - 1.4 GHz Operation

800 W Minimum Output Power

14 dB Power Gain

69% Typical Drain Efﬁciency

<0.3 dB Pulsed Amplitude Droop

Internally input and output matched

Subject to change without notice.

www.cree.com/rf

12 3 4 5 6 7...9

下载PDF

型号	品牌	描述	获取价格	数据表
CGHV14800P	CREE	RF Power Field-Effect Transistor, 1-Element, L Band, Gallium Nitride, N-Channel, High Elec	获取价格
CGHV14800-TB	CREE	800 W, 1200 - 1400 MHz, 50 V, GaN HEMT for L-Band Radar Systems	获取价格
CGHV1A250	MACOM	8.8 - 9.6 GHz, 300 W, 45 V, Packaged GaN Transistor	获取价格
CGHV1F006	MACOM	6 W; DC - 15.0 GHz; 40 V; GaN HEMT	获取价格
CGHV1F006S	CREE	6 W, DC - 18 GHz, 40V, GaN HEMT	获取价格
CGHV1F006S-AMP1	CREE	6 W, DC - 18 GHz, 40V, GaN HEMT	获取价格