Datasheet > CGHV1J025D-GP4

CGHV1J025D-GP4

更新时间： 2024-04-09 19:02:37

品牌	Logo	应用领域
MACOM		/
页数	文件大小	规格书
10页	503K
描述
25 W; 18.0 GHz; GaN HEMT Die

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CGHV1J025D-GP4 数据手册

CGHV1J025D

25 W, 18.0 GHz, GaN HEMT Die

Description

The CGHV1J025D is a high voltage gallium nitride (GaN) High Electron Mobility

Transistor (HEMT) on a silicon carbide substrate, using a 0.25μm gate length

fabrication process. This GaN-on-SiC product offers superior high frequency, high

efficiency features. It is ideal for a variety of applications operating from

10 GHz to 18 GHz at 40 V with a high breakdown voltage.

PN: CGHV1J025D

Features

Applications

•

17 dB Typ. Small Signal Gain at 10 GHz

60% Typ. PAE at 10 GHz

25 W Typical P_SAT

40 V Operation

Up to 18 GHz Operation

•

Satellite Communications

PTP Communications Links

Marine Radar

Pleasure Craft Radar

Port Vessel Traffic Services

Broadband Amplifiers

High Efficiency Amplifiers

Packaging Information

•

Bare die are shipped in Gel-Pak® containers

Non-adhesive tacky membrane immobilizes die during shipment

Large Signal Models Available for ADS and MWO

MACOM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.

Visit www.macom.com for additional data sheets and product information.

Rev. 2.2, 2022-12-2

For further information and support please visit:

https://www.macom.com/support

12 3 4 5 6 7...10

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