Datasheet > CGHV14800

CGHV14800

更新时间： 2024-03-03 10:08:44

品牌	Logo	应用领域
MACOM		/
页数	文件大小	规格书
10页	624K
描述
800 W; 1200 - 1400 MHz; GaN HEMT for L - Band Radar Systems

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CGHV14800 数据手册

CGHV14800

Absolute Maximum Ratings (not simultaneous)

Parameter

Symbol

V_DSS

V_GS

Rating

150

Units

Conditions

Drain-Source Voltage

25˚C

Gate-to-Source Voltage

Storage Temperature

-10, +2

-65, +150

225

T_STG

T_J

ºC

Operating Junction Temperature

Maximum Forward Gate Current

Maximum Drain Current¹

Maximum Duty Cycle

I_GMAX

I_DMAX

132

25ºC

Soldering Temperature²

T_S

245

ºC

Screw Torque

in-oz

ºC/W

ºC

Pulsed Thermal Resistance, Junction to Case³

Case Operating Temperature⁴

R_θJC

T_C

0.16

P_DISS= 664 W, 100µsec, 5%, 85ºC

P_DISS= 664 W, 100µsec, 5%

-40, +100

Notes:

³Measured for the CGHV14800F-AMP

¹Current limit for long term, reliable operation

²Refer to the Application Note on soldering

⁴See also, the Power Dissipation De-rating Curve on Page 7

Electrical Characteristics (T_C= 25ºC)

Characteristics

Symbol Min.

Typ.

Max. Units Conditions

DC Characteristics¹

Gate Threshold Voltage

Gate Quiescent Voltage

Saturated Drain Current²

Drain-Source Breakdown Voltage

V_GS(th)

V_GS(Q)

I_DS

-3.8

-3.0

-2.7

123.5

—

-2.3

—

V_DS= 10 V, I_D= 132.8 mA

V_DS= 50 V, I_D= 800 mA

V_DS= 6.0 V, V_GS= 2.0 V

V_GS= -8 V, I_D= 132.8 mA

V_DC

—

86.3

125

—

V_BR

V_DC

RF Characteristics³(T_C= 25ºC, F₀= 1.3 GHz unless otherwise noted)

—

Output Power at ƒ = 1.2 GHz

Output Power at ƒ = 1.23 GHz

Output Power at ƒ = 1.4 GHz

Drain Efficiency at ƒ = 1.2 GHz

Drain Efficiency at ƒ = 1.23 GHz

Drain Efficiency at ƒ = 1.4 GHz

Pulsed Amplitude Droop

804

795

750

977

933

912

—

P_OUT

V_DD= 50 V, I_DQ= 800 mA, P_IN= 44.5 dBm

V_DD= 50 V, I_DQ= 800 mA

—

-0.3

No damage at all phase angles,

V_DD= 50 V, I_DQ= 800 mA, P_IN= 44.5 dBm Pulsed

—

Output Mismatch Stress

VSWR

9:1

Dynamic Characteristics

Input Capacitance

—

C_GS

C_DS

C_GD

326

643

3.9

Output Capacitance

V_DS= 50 V, V_GS= -8 V, ƒ = 1 MHz

Feedback Capacitance

Notes:

¹Measured on wafer prior to packaging

²Scaled from PCM data

³Measured in CGHV14800F-AMP. Pulsed Width = 100µs, Duty Cycle = 5%.

MACOM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.

Visit www.macom.com for additional data sheets and product information.

Rev. 2.5, 2022-12-2

For further information and support please visit:

https://www.macom.com/support

123 4 5 6 7...10

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与CGHV14800相关器件

型号	品牌	获取价格	描述	数据表
CGHV14800F	CREE	获取价格	800 W, 1200 - 1400 MHz, 50 V, GaN HEMT for L-Band Radar Systems
CGHV14800F-AMP	CREE	获取价格	800 W, 1200 - 1400 MHz, 50 V, GaN HEMT for L-Band Radar Systems
CGHV14800P	CREE	获取价格	RF Power Field-Effect Transistor, 1-Element, L Band, Gallium Nitride, N-Channel, High Elec
CGHV14800-TB	CREE	获取价格	800 W, 1200 - 1400 MHz, 50 V, GaN HEMT for L-Band Radar Systems
CGHV1A250	MACOM	获取价格	8.8 - 9.6 GHz, 300 W, 45 V, Packaged GaN Transistor
CGHV1F006	MACOM	获取价格	6 W; DC - 15.0 GHz; 40 V; GaN HEMT
CGHV1F006S	CREE	获取价格	6 W, DC - 18 GHz, 40V, GaN HEMT
CGHV1F006S-AMP1	CREE	获取价格	6 W, DC - 18 GHz, 40V, GaN HEMT
CGHV1F006S-AMP2	CREE	获取价格	6 W, DC - 18 GHz, 40V, GaN HEMT
CGHV1F006S-AMP3	CREE	获取价格	6 W, DC - 18 GHz, 40V, GaN HEMT

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