Datasheet > CGHV22100F-AMP

CGHV22100F-AMP

更新时间： 2022-02-26 10:57:27

品牌	Logo	应用领域
科锐 - CREE		LTE
页数	文件大小	规格书
11页	1006K
描述
100 W, 1800-2200 MHz, GaN HEMT for LTE

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

CGHV22100F-AMP 数据手册

CGHV22100

100 W, 1800-2200 MHz, GaN HEMT for LTE

Cree’s CGHV22100 is a gallium nitride (GaN) high electron mobility transistor (HEMT)

is designed speciﬁcally for high efﬁciency, high gain and wide bandwidth capabilities,

which makes the CGHV22100 ideal for 1.8 - 2.2 GHz LTE, 4G Telecom and BWA

ampliﬁer applications. The transistor is input matched and supplied in a ceramic/

metal ﬂange package.

Typical Performance Over 1.8 - 2.2 GHz (T_C= 25˚C) of Demonstration Ampliﬁer

Parameter

1.8 GHz

2.0 GHz

2.2 GHz

Units

Gain @ 44 dBm

18.7

20.7

22.0

ACLR @ 44 dBm

Drain Efﬁciency @ 44 dBm

Note:

-37.8

35.4

-37.1

31.7

-35.1

30.6

dBc

Measured in the CGHV22100-AMP ampliﬁer circuit, under WCDMA 3GPP test model 1, 64 DPCH, 45% clipping,

PAR = 7.5 dB @ 0.01% Probability on CCDF.

Features

•

1.8 - 2.2 GHz Operation

20 dB Gain

-35 dBc ACLR at 25 W P_AVE

31-35 % Efﬁciency at 25 W P_AVE

High Degree of DPD Correction Can be Applied

Subject to change without notice.

www.cree.com/rf

12 3 4 5 6 7...11

中文翻译

下载PDF

与CGHV22100F-AMP相关器件

型号	品牌	获取价格	描述	数据表
CGHV22100P	CREE	获取价格	100 W, 1800-2200 MHz, GaN HEMT for LTE
CGHV22100-TB	CREE	获取价格	100 W, 1800-2200 MHz, GaN HEMT for LTE
CGHV22200	CREE	获取价格	200 W, 1800-2200 MHz, GaN HEMT for LTE
CGHV22200F	CREE	获取价格	200 W, 1800-2200 MHz, GaN HEMT for LTE
CGHV22200F-AMP	CREE	获取价格	200 W, 1800-2200 MHz, GaN HEMT for LTE
CGHV22200P	CREE	获取价格	200 W, 1800-2200 MHz, GaN HEMT for LTE
CGHV22200-TB	CREE	获取价格	200 W, 1800-2200 MHz, GaN HEMT for LTE
CGHV22300MP	CREE	获取价格	RF Power Field-Effect Transistor
CGHV27015S	CREE	获取价格	RF Power Field-Effect Transistor,
CGHV27015S	MACOM	获取价格	15 W; DC - 6.0 GHz; 50 V; GaN HEMT