CGHV1F006S
6 W, DC - 18 GHz, 40V, GaN HEMT
Cree’s CGHV1F006S is an unmatched, gallium nitride (GaN) high electron mobility transistor
(HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities.
The device can be deployed for L, S, C, X and Ku-Band amplifier applications. The datasheet
specifications are based on a C-Band (5.5 - 6.5 GHz) amplifier. Additional application
circuits are available for C-Band at 5.8 GHz - 7.2 GHz and X-Band at 7.9 - 8.4 GHz and 8.5 -
9.6 GHz. The CGHV1F006S operates on a 40 volt rail circuit while housed in a 3mm x 4mm,
surface mount, dual-flat-no-lead (DFN) package. Under reduced power, the transistor can
operate below 40V to as low as 20V VDD, maintaining high gain and efficiency.
Typical Performance 5.5-6.5 GHz (TC = 25˚C) , 40 V
Parameter
5.5 GHz
6.0 GHz
6.5 GHz
Units
Small Signal Gain
15.4
16.5
17.8
dB
Output Power @ PIN = 28 dBm
Drain Efficiency @ PIN = 28 dBm
Note:
38.6
55
39.3
57
39.0
52
dBm
%
Measured in the CGHV1F006S-AMP application circuit. Pulsed 100 µs 10% duty.
Features for 40 V in CGHV1F006S-AMP
•
•
•
•
•
•
Up to 18 GHz Operation
8 W Typical Output Power
17 dB Gain at 6.0 GHz
15 dB Gain at 9.0 GHz
Application circuits for 5.8 - 7.2 GHz, 7.9 - 8.4 GHz, and 8.5 - 9.6 GHz.
High degree of APD and DPD correction can be applied
Listing of Available Hardware Application Circuits / Demonstration Circuits
Application Circuit
CGHV1F006S-AMP1
CGHV1F006S-AMP2
CGHV1F006S-AMP3
CGHV1F006S-AMP4
Operating Frequency
5.85 - 7.2 GHz
7.9 - 8.4 GHz
Amplifier Class
Class A/B
Operating Voltage
40 V
40 V
40 V
20 V
Class A/B
8.5 - 9.6 GHz
Class A/B
4.9 - 5.9 GHz
Class A/B
Subject to change without notice.
www.cree.com/rf
1