Datasheet > CGHV1J006D-GP4

CGHV1J006D-GP4

更新时间： 2024-04-09 19:03:08

品牌	Logo	应用领域
MACOM		/
页数	文件大小	规格书
9页	593K
描述
6 W; 18.0 GHz; GaN HEMT Die

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CGHV1J006D-GP4 数据手册

CGHV1J006D

6 W, 18.0 GHz, GaN HEMT Die

Description

The CGHV1J006D is a high voltage gallium nitride (GaN) High Electron

Mobility Transistor (HEMT) on a silicon carbide substrate, using a 0.25 μm

gate length fabrication process. This GaN-on-SiC product oﬀers superior

high frequency, high eﬀiciency features. It is ideal for a variety

of applications operating from 10 MHz to 18 GHz at 40 V with a high

breakdown voltage.

PN: CGHV1J006D

Features

Applications

•

17 dB Typ. Small Signal Gain at 10 GHz

60% Typ. PAE at 10 GHz

6 W Typical P_SAT

40 V Operation

Up to 18 GHz Operation

•

Satellite Communications

PTP Communications Links

Marine Radar

Pleasure Craꢀ Radar

Port Vessel Traﬀic Services

Broadband Amplifiers

High Eﬀiciency Amplifiers

Packaging Information

•

Bare die are shipped in Gel-Pak® containers

Non-adhesive tacky membrane immobilizes die during shipment

Large Signal Models Available for ADS and MWO

MACOM Technology Solutions Inc. (MACOM) and its aﬃliates reserve the right to make changes to the product(s) or information contained herein without notice.

Visit www.macom.com for additional data sheets and product information.

Rev. 2.0, 2022-7-27

For further information and support please visit:

https://www.macom.com/support

12 3 4 5 6 7...9

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