Datasheet > CDBUR0530-HF

CDBUR0530-HF

更新时间： 2024-11-02 01:25:47

品牌	Logo	应用领域
上华 - COMCHIP		二极管
页数	文件大小	规格书
4页	122K
描述
SMD Schottky Barrier Diode

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中文翻译

获取价格

技术参数
数据手册

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CDBUR0530-HF 技术参数

是否Rohs认证：	符合	生命周期：	Active
Reach Compliance Code：	compliant	风险等级：	5.67
二极管类型：	RECTIFIER DIODE	峰值回流温度（摄氏度）：	260
处于峰值回流温度下的最长时间：	30	Base Number Matches：	1

CDBUR0530-HF 数据手册

SMD Schottky Barrier Diode

CDBUR0530-HF

Io = 500 mA

VR = 20 Volts

RoHS Device

Halogen Free

0603/SOD-523F

Features

0.071(1.80)

0.063(1.60)

-Low forward voltage.

-Designed for mounting on small surface.

-Extremely thin / leadless package.

-Majority carrier conduction.

0.039(1.00)

0.031(0.80)

Mechanical data

0.033(0.85)

0.027(0.70)

-Case: 0603/SOD-523F standard package,

molded plastic.

0.018(0.45) Typ.

-Terminals: Gold plated, solderable per

MIL-STD-750,method 2026.

-Marking code: cathode band & BR

-Mounting position: Any

0.028(0.70) Typ.

-Weight: 0.003 gram(approx.).

Dimensions in inches and (millimeter)

Maximum Rating (at TA=25 C unless otherwise noted)

Symbol

Parameter

Peak reverse voltage

Reverse voltage

Conditions

Min Typ Max Unit

VRM

Average forward rectified current

0.5

8.3 ms single half sine-wave superimposed

on rate load (JEDEC method)

Forward current,surge peak

Storage temperature

IFSM

TSTG

-40

+125

Junction temperature

+125

Electrical Characteristics (at TA=25 C unless otherwise noted)

Typ

Symbol

Parameter

Conditions

Min

Max Unit

Forward voltage

IF = 100mA

IF = 500mA

0.36

0.47

Reverse current

VR = 20V

100

Capacitance between terminals

f = 1 MHz, and 0 VDC reverse voltage

100

REV:A

Page 1

QW-G1086

Comchip Technology CO., LTD.

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中文翻译

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