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CDBUR54-HF PDF预览

CDBUR54-HF

更新时间: 2024-11-02 01:25:03
品牌 Logo 应用领域
上华 - COMCHIP /
页数 文件大小 规格书
4页 122K
描述
SMD Schottky Barrier Diode

CDBUR54-HF 数据手册

 浏览型号CDBUR54-HF的Datasheet PDF文件第2页浏览型号CDBUR54-HF的Datasheet PDF文件第3页浏览型号CDBUR54-HF的Datasheet PDF文件第4页 
SMD Schottky Barrier Diode  
CDBUR54-HF  
Io = 200 mA  
VR = 30 Volts  
RoHS Device  
Halogen Free  
0603/SOD-523F  
0.071(1.80)  
0.063(1.60)  
Features  
-Low forward voltage.  
0.039(1.00)  
0.031(0.80)  
-Designed for mounting on small surface.  
-Extremely thin / leadless package.  
-Majority carrier conduction.  
0.033(0.85)  
0.027(0.70)  
Mechanical data  
-Case: 0603/SOD-523F standard package,  
0.018(0.45) Typ.  
molded plastic.  
-Terminals: Gold plated, solderable per  
MIL-STD-750,method 2026.  
-Marking code: cathode band & BF  
-Mounting position: Any  
0.028(0.70) Typ.  
Dimensions in inches and (millimeter)  
-Weight: 0.003 gram(approx.).  
O
Maximum Rating (at TA=25 C unless otherwise noted)  
Symbol  
Min Typ Max Unit  
Parameter  
Peak reverse voltage  
Reverse voltage  
Conditions  
VRM  
30  
V
VR  
30  
V
RMS reverse voltage  
VR(RMS)  
IO  
21  
200  
0.3  
V
mA  
A
Average forward rectified current  
Repetitive peak forward current  
IFRM  
8.3 ms single half sine-wave superimposed  
on rate load(JEDEC method)  
Forward current,surge peak  
IFSM  
0.6  
A
Power dissipation  
PD  
TSTG  
Tj  
150  
mW  
O
Storage temperature  
Junction temperature  
-65  
+125  
+125  
C
O
C
O
Electrical Characteristics (at TA=25 C unless otherwise noted)  
Typ  
Symbol  
Parameter  
Conditions  
Min  
Max Unit  
IF = 0.1mA  
IF = 1mA  
IF = 10mA  
IF = 30mA  
IF = 100mA  
0.24  
0.32  
Forward voltage  
VF  
V
0.4  
0.5  
1
Reverse current  
VR = 25V  
IR  
2
10  
5
uA  
pF  
Capacitance between terminals  
f = 1 MHz, and 1 VDC reverse voltage  
IF=IR=10mA,Irr=0.1xIR,RL=100 Ohm  
CT  
Reverse recovery time  
Trr  
nS  
REV:A  
Page 1  
QW-G1018  
Comchip Technology CO., LTD.  

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