Datasheet > CDBUR54-HF

CDBUR54-HF

更新时间： 2024-11-06 01:25:03

品牌	Logo	应用领域
上华 - COMCHIP		/
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描述
SMD Schottky Barrier Diode

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中文翻译

获取价格

数据手册

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CDBUR54-HF 数据手册

SMD Schottky Barrier Diode

CDBUR54-HF

Io = 200 mA

VR = 30 Volts

RoHS Device

Halogen Free

0603/SOD-523F

0.071(1.80)

0.063(1.60)

Features

-Low forward voltage.

0.039(1.00)

0.031(0.80)

-Designed for mounting on small surface.

-Extremely thin / leadless package.

-Majority carrier conduction.

0.033(0.85)

0.027(0.70)

Mechanical data

-Case: 0603/SOD-523F standard package,

0.018(0.45) Typ.

molded plastic.

-Terminals: Gold plated, solderable per

MIL-STD-750,method 2026.

-Marking code: cathode band & BF

-Mounting position: Any

0.028(0.70) Typ.

Dimensions in inches and (millimeter)

-Weight: 0.003 gram(approx.).

Maximum Rating (at TA=25 C unless otherwise noted)

Symbol

Min Typ Max Unit

Parameter

Peak reverse voltage

Reverse voltage

Conditions

VRM

RMS reverse voltage

VR(RMS)

200

0.3

Average forward rectified current

Repetitive peak forward current

IFRM

8.3 ms single half sine-wave superimposed

on rate load(JEDEC method)

Forward current,surge peak

IFSM

0.6

Power dissipation

TSTG

150

Storage temperature

Junction temperature

-65

+125

Electrical Characteristics (at TA=25 C unless otherwise noted)

Typ

Symbol

Parameter

Conditions

Min

Max Unit

IF = 0.1mA

IF = 1mA

IF = 10mA

IF = 30mA

IF = 100mA

0.24

0.32

Forward voltage

0.4

0.5

Reverse current

VR = 25V

Capacitance between terminals

f = 1 MHz, and 1 VDC reverse voltage

IF=IR=10mA,Irr=0.1xIR,RL=100 Ohm

Reverse recovery time

Trr

REV:A

Page 1

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Comchip Technology CO., LTD.

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