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CDBV0140-G PDF预览

CDBV0140-G

更新时间: 2024-11-01 12:54:31
品牌 Logo 应用领域
上华 - COMCHIP 二极管
页数 文件大小 规格书
2页 85K
描述
SMD Schottky Barrier Diode

CDBV0140-G 数据手册

 浏览型号CDBV0140-G的Datasheet PDF文件第2页 
SMD Schottky Barrier Diode  
CDBV0140-G  
IO=0.1A  
VR=30V  
RoHSDevice  
SOD-323  
Features  
-High current rectifier Schottky diode.  
-Low voltage, low inductance.  
-For power supply.  
0.071 (1.80)  
0.063 (1.60)  
0.014 (0.35)  
0.010 (0.25)  
0.055 (1.40)  
0.047 (1.20)  
Mechanical data  
0.106 (2.70)  
0.098 (2.50)  
- Case: SOD-323, Molded Plastic  
0.006 (0.15)  
0.003 (0.08)  
0.039 (1.00)max  
-
-
Terminals: Solderable per MIL-STD-202,  
Method 208  
0.019 (0.475)REF.  
0.004 (0.10)max  
Marking: 4  
Dimensions in inches and (millimeters)  
Maximum Ratings (at Ta=25°C unless otherwise noted)  
Symbol  
Parameter  
Peak reverse voltage  
Limits  
Unit  
VRM  
45  
V
DC reverse voltage  
VR  
40  
0.1  
V
Average rectified current  
Peak forward surge current  
Junction temperature range  
Storage temperature range  
IO  
A
IFSM  
TJ  
1
A
OC  
OC  
-55 ~ +125  
-55 ~ +125  
TSTG  
Electrical Characteristics (at Ta=25°C unless otherwise noted)  
Symbol  
Typ  
Parameter  
Conditions  
Min  
Max Unit  
IF=100mA  
IF=10mA  
0.55  
V
Forward voltage  
VF  
0.34  
Reverse current  
IR  
μA  
VR=10V  
30  
Capacitance between terminals  
CT  
pF  
6
VR=10V, f=1MHz  
REV:A  
Page 1  
QW-BA014  

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