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CDBV140-HF PDF预览

CDBV140-HF

更新时间: 2024-11-02 01:19:07
品牌 Logo 应用领域
上华 - COMCHIP 二极管
页数 文件大小 规格书
5页 146K
描述
SMD Schottky Barrier Diodes

CDBV140-HF 技术参数

是否Rohs认证: 符合生命周期:Active
Reach Compliance Code:compliant风险等级:5.72
二极管类型:RECTIFIER DIODE峰值回流温度(摄氏度):260
处于峰值回流温度下的最长时间:30Base Number Matches:1

CDBV140-HF 数据手册

 浏览型号CDBV140-HF的Datasheet PDF文件第2页浏览型号CDBV140-HF的Datasheet PDF文件第3页浏览型号CDBV140-HF的Datasheet PDF文件第4页浏览型号CDBV140-HF的Datasheet PDF文件第5页 
SMD Schottky Barrier Diodes  
CDBV120-HF Thru. CDBV140-HF  
Forward current: 1.0A  
Reverse voltage: 20 to 40V  
RoHS Device  
SOD-323  
Halogen Free  
0.108 (2.75)  
0.100 (2.55)  
Features  
- For use in low voltage, high frequency inverters.  
- Free wheeling, and polarity protection applications.  
0.014 (0.35)  
0.010 (0.25)  
0.055 (1.40)  
0.047 (1.20)  
0.071 (1.80)  
0.063 (1.60)  
Mechanical Data  
- Case: SOD-323, molded plastic.  
0.035 (0.90)  
0.031 (0.80)  
- Terminals: Solderable per MIL-STD-750, method  
2026.  
0.006 (0.150)  
0.003 (0.080)  
0.039 (1.00)  
MAX.  
- Polarity: Indicated by cathode end.  
0.004 (0.10)  
0.000 (0.00)  
0.019 (0.475)REF  
Circuit Diagram  
Dimensions in inches and (millimeter)  
Maximum Ratings (At Ta=25°C, unless otherwise noted)  
Symbol  
CDBV120-HF CDBV130-HF CDBV140-HF  
Parameter  
Unit  
Non-repetitive peak reverse voltage  
VRM  
20  
20  
14  
30  
40  
40  
28  
V
Peak repetitive peak reverse voltage  
Working peak reverse voltage  
DC blocking voltage  
VRRM  
VRWM  
VR  
V
30  
RMS reverse voltage  
VR(RMS)  
IO  
21  
V
A
Average rectified output current  
Non-repetitive peak forward surge current @ t=8.3ms  
Repetitive peak forward current  
Power dissipation  
1
9
IFSM  
IFRM  
PD  
A
1.5  
A
250  
mW  
°C/W  
°C  
Thermal resistance, junction to ambient  
Junction temperature range  
RθJA  
TJ  
400  
-40 ~ +125  
-55 ~ +150  
Storage temperature range  
TSTG  
°C  
Electrical Characteristics (At Ta=25°C, unless otherwise noted)  
Symbol  
Parameter  
Conditions  
Min.  
Max.  
Unit  
CDBV120-HF  
CDBV130-HF IR = 1mA  
CDBV140-HF  
20  
30  
40  
Reverse breakdown voltage  
V(BR)  
V
CDBV120-HF  
CDBV130-HF  
CDBV140-HF  
VR = 20V  
VR = 30V  
VR = 40V  
Reverse voltage leakage current  
IR  
1
mA  
V
CDBV120-HF  
CDBV130-HF  
CDBV140-HF  
0.45  
0.55  
0.60  
IF = 1A  
Forward voltage  
VF  
CDBV120-HF  
CDBV130-HF  
CDBV140-HF  
0.75  
0.875  
0.90  
IF = 3A  
V
Diode capacitance  
pF  
VR = 4V, f = 1MHz  
CD  
120  
Company reserves the right to improve product design , functions and reliability without notice.  
REV:B  
Page 1  
QW-JB041  
Comchip Technology CO., LTD.  

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