Datasheet > CDBV220-G

CDBV220-G

更新时间： 2024-11-06 01:25:47

品牌	Logo	应用领域
上华 - COMCHIP		/
页数	文件大小	规格书
4页	133K
描述
SMD Schottky Barrier Diodes

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中文翻译

获取价格

数据手册

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CDBV220-G 数据手册

SMD Schottky Barrier Diodes

CDBV220-G

Forward current: 2.0A

Reverse voltage: 20V

RoHS Device

SOD-323

Features

0.108 (2.75)

0.100 (2.55)

- Low Forward Voltage Drop.

- Very Small SMD Package.

0.014 (0.35)

0.010 (0.25)

0.055 (1.40)

0.047 (1.20)

0.071 (1.80)

0.063 (1.60)

Mechanical Data

- Case: SOD-323, molded plastic.

- Terminals: Solderable per MIL-STD-750, method

2026.

- Polarity: Indicated by cathode end.

0.006 (0.15)

0.003 (0.08)

0.039 (1.00)

MAX.

0.004 (0.10)

0.000 (0.00)

0.019 (0.475)REF

Circuit Diagram

Dimensions in inches and (millimeter)

Maximum Ratings (At Ta=25°C, unless otherwise noted)

Symbol

CDBV220-G

Parameter

Unit

Peak repetitive reverse voltage

Working peak reverse voltage

VRRM

VRWM

RMS reverse voltage

VR(RMS)

Continuous forward current

Non-repetitive peak forward surge current @ t=8.3ms

IFSM

250

480

400

208

(Note 1)

(Note 2)

Power dissipation

(Note 1)

(Note 2)

Thermal resistance from junction to ambient

RθJA

°C/W

Junction temperature range

Storage temperature range

-40 ~ +125

-55 ~ +150

°C

TSTG

Note: (1) Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.

(2) Device mounted on an FR4 PCB with copper pad 10 x 10 mm.

Electrical Characteristics (At Ta=25°C, unless otherwise noted)

Symbol

Parameter

Conditions

Min.

Max.

Unit

Reverse breakdown voltage

V(BR)

IR = 1mA

VR = 10V

VR = 20V

IF = 1A

μA

Reverse current

100

0.45

0.55

Forward voltage (Note 1)

IF = 2A

Total capacitance

VR = 4V, f = 1MHz

Ctot

120

Note: (1) Pulse test: tp ≤ 300μs ; δ ≤ 0.02

Company reserves the right to improve product design , functions and reliability without notice.

REV: A

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Comchip Technology CO., LTD.

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中文翻译

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