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CDBV0540 PDF预览

CDBV0540

更新时间: 2024-10-31 22:29:23
品牌 Logo 应用领域
上华 - COMCHIP 二极管
页数 文件大小 规格书
2页 56K
描述
SMD Schottky Barrier Diodes

CDBV0540 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
Reach Compliance Code:compliantECCN代码:EAR99
风险等级:5.92Base Number Matches:1

CDBV0540 数据手册

 浏览型号CDBV0540的Datasheet PDF文件第2页 
SSMMDD SScchhoottttkky Barrier Diodes  
CCOOMMCCHHIIPP  
www.comchip.com.tw  
CDBV0520 - CDBV0540  
Voltage: 20- 40 Volts  
Current: 0.5 Amp  
Features  
SOD-323  
Extremely Low Drop Down Voltage  
Extremely Thin Package  
Low Stored Charge  
.112 (2.85)  
.100 (2.55)  
.076 (1.95)  
.065 (1.50)  
Majority Carrier Conduction  
Mechanical data  
Case: SOD-323, molded plastic  
Terminals: solderable per MIL-STD-750,  
method 2026  
Polarity: Indicated by cathode band  
.004 (0.1) MAX.  
.010 (0.25)MIN.  
Mounting position: Any  
Dimensions in inches and (millimeters)  
Weight:0.0045 grams  
Maximum Ratings and Electrical Characterics  
CDBV 0520  
CDBV 0540  
Parameter  
CDBV 0530  
Symbol  
Unit  
20  
14  
20  
40  
28  
40  
Max.RepetitivePeak Reverse Voltage  
Max. DC BlockingVoltage  
Max. RMS Voltage  
30  
21  
30  
VRRM  
V
V
V
VDC  
VRMS  
Peak Surge ForwardCurrent  
8.3ms single halfsine-wave  
Sine-wave superimposed on  
Rate load (JEDEC )  
IFSM  
A
2.0  
Max. AverageForward Current  
I o  
0.5  
A
V
0.31  
0.43  
0.36  
0.47  
Max. Forward Currentat 0.1 A  
0.5 A  
0.36  
0.47  
V F  
0.10 @ VR=10V  
0.03 @ VR=10V  
Max. Reverse Current  
0.03 @ VR=10V  
I R  
mA  
0.25 @ VR=20V  
0.13 @ VR=30V  
0.13 @ VR=30V  
Max. Thermal Resistance  
426  
R
JA  
C/W  
Operating junction temperature  
-40 to +125  
C
T j  
Storage temperature  
-40 to +125  
C
TSTG  
Note 1: Thermalresistance from junctionto ambient  
Page 1  
MDS0302002B  

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