Datasheet > CDBV1100-HF

CDBV1100-HF

更新时间： 2024-11-06 01:25:47

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上华 - COMCHIP		/
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描述
SMD Schottky Barrier Diodes

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中文翻译

获取价格

数据手册

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CDBV1100-HF 数据手册

SMD Schottky Barrier Diodes

CDBV1100-HF

Forward current: 1A

Reverse voltage: 100V

RoHS Device

SOD-323

Halogen Free

0.108(2.75)

0.098(2.50)

Features

0.012(0.30)

Typ.

0.055 (1.40)

0.047 (1.20)

- Low leakage current.

- Easy pick and place.

0.071(1.80)

0.063(1.60)

- Plastic package has Underwriters Lab. Flammability

Classification 94V-0

0.004(0.10)

Typ.

- Exceeds environmental standard MIL-S-19500/228.

0.035(0.90)

0.031(0.80)

0.004(0.10)

0.001(0.02)

0.004(0.42)

0.009(0.22)

Mechanical Data

- Case: SOD-323, molded plastic.

Dimensions in inches and (millimeter)

- Terminals: Solderable per MIL-STD-750,

method 2026.

- Polarity: Indicated by cathode end.

Circuit Diagram

Maximum Ratings (At Ta=25°C, unless otherwise noted)

Symbol

Value

Parameter

Unit

Peak repetitive reverse voltage

Working peak reverse voltage

VRRM

VRWM

100

RMS reverse voltage

VR(RMS)

Average rectified output current

Non-repetitive peak forward surge current @ t=8.3ms

Power dissipation

IFSM

250

°C/W

°C

Thermal resistance from junction to ambient

Junction temperature range

RθJA

400

-55 ~ +150

Storage temperature range

TSTG

°C

Electrical Characteristics (at TA=25°C unless otherwise noted)

Symbol

Typ.

Parameter

Conditions

Min.

Max.

Unit

Reverse current TJ=25°C

VR = 100V

0.2

IF = 0.1A

0.52

Forward voltage (Note 1)

IF = 1A

0.82

Total capacitance

f = 1MHz, VR = 4V

Ctot

Notes: (1) Pulse test : tp≤ 300µs; δ≤ 0.02

Company reserves the right to improve product design , functions and reliability without notice.

REV: A

Page 1

QW-JB067

Comchip Technology CO., LTD.

12 3 4

中文翻译

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