Datasheet > CDBV120-G_12

CDBV120-G_12

更新时间： 2024-11-01 07:19:31

品牌	Logo	应用领域
上华 - COMCHIP		二极管
页数	文件大小	规格书
4页	102K
描述
SMD Schottky Barrier Diodes

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中文翻译

获取价格

数据手册

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CDBV120-G_12 数据手册

SMD Schottky Barrier Diodes

CDBV120-G Thru. CDBV140-G

Forward current: 1.0A

Reverse voltage: 20 to 40V

RoHS Device

SOD-323

Features

-For use in low voltage, high frequency inverters.

-Free wheeling, and polarity protection applications.

0.106 (2.70)

0.098 (2.50)

Mechanical Data

-Case: SOD-323, molded plastic.

0.014 (0.35)

0.010 (0.25)

0.055 (1.40)

0.047 (1.20)

0.071 (1.80)

0.063 (1.60)

-Terminals: solderable per MIL-STD-750, method

2026.

-Polarity: indicated by cathode end.

0.006 (0.150)

0.003 (0.080)

0.035 (0.90)

0.031 (0.80)

Marking

CDBV120-G: SJ

0.004 (0.10)max

0.019 (0.475)REF

CDBV130-G: SK

CDBV140-G: SL

Dimensions in inches and (millimeter)

Maximum Ratings (At Ta=25°C, unless otherwise noted)

Parameter

Symbol

Unit

CDBV120-G

CDBV130-G

CDBV140-G

Non-repetitive peak reverse voltage

VRM

Peak repetitive peak reverse voltage

Working peak reverse voltage

DC blocking voltage

VRRM

VRWM

RMS reverse voltage

VR(RMS)

Average rectified output current

Peak forward surge current @8.3ms

Repetitive peak forward current

Power dissipation

IFSM

IFRM

1.5

250

°C/W

°C

Thermal resistance, junction to ambient

Storage temperature

RθJA

TSTG

500

-65 ~ +150

Electrical Characteristics (At Ta=25°C, unless otherwise noted)

Symbol

Min.

Max.

Parameter

Conditions

Unit

CDBV120-G

CDBV130-G

CDBV140-G

Reverse breakdown voltage

IR=1mA

VBR

CDBV120-G

CDBV130-G

CDBV140-G

VR=20V

VR=30V

VR=40V

Reverse voltage leakage current

Forward voltage

CDBV120-G

CDBV130-G

CDBV140-G

0.45

0.55

0.60

IF=1A

CDBV120-G

CDBV130-G

CDBV140-G

0.75

0.875

0.90

IF=3A

Diode capacitance

QW-BB015

VR=4V, f=1MHz

120

REV:B

Page 1

Comchip Technology CO., LTD.

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