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CDBURT0230R-HF PDF预览

CDBURT0230R-HF

更新时间: 2024-11-01 07:19:31
品牌 Logo 应用领域
上华 - COMCHIP 二极管
页数 文件大小 规格书
4页 126K
描述
Low Profile SMD Schottky Barrier Diode

CDBURT0230R-HF 数据手册

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Low Profile SMD Schottky Barrier Diode  
CDBURT0230R-HF  
Forward Current = 200 mA  
Reverse Voltage = 30 Volts  
RoHS Device  
Halogen Free  
0603/SOD-523F  
Features  
-Low reverse current.  
0.071(1.80)  
0.063(1.60)  
-Designed for mounting on small surface.  
-Extremely thin / leadless package.  
0.039(1.00)  
0.031(0.80)  
-Low profile package is 30% thinner than standards  
0603  
-Majority carrier conduction.  
0.022(0.55)  
0.018(0.45)  
Mechanical data  
-Case: 0603/SOD-523F standard package,  
molded plastic.  
0.018(0.45) Typ.  
-Terminals: Gold plated, solderable per  
MIL-STD-750,method 2026.  
-Polarity: Indicated by cathode band.  
-Marking code: BB  
0.028(0.70) Typ.  
Dimensions in inches and (millimeter)  
-Mounting Position: Any  
-Weight: 0.0019 grams approx.  
O
Maximum Rating (at TA=25 C unless otherwise noted)  
Symbol  
Typ  
Max Unit  
Parameter  
Repetitive peak reverse voltage  
Conditions  
Min  
VRRM  
V
35  
V
Reverse voltage  
30  
VR  
mA  
A
Average forward current  
IO  
200  
1
8.3ms single half sine-wave superimposed  
on rate load(JEDEC method)  
Forward current,surge peak  
IFSM  
O
Storage temperature  
Junction temperature  
TSTG  
Tj  
-40  
+125  
+125  
C
O
C
O
Electrical Characteristics (at TA=25 C unless otherwise noted)  
Symbol  
Typ  
Max Unit  
Parameter  
Conditions  
Min  
Forward voltage  
IF = 200 mA  
VR = 10 V  
VF  
0.6  
V
Reverse current  
IR  
1
uA  
REV:A  
Page 1  
QW-G1108  
Comchip Technology CO., LTD.  

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