5秒后页面跳转
BYV410-600 PDF预览

BYV410-600

更新时间: 2024-09-12 06:44:55
品牌 Logo 应用领域
恩智浦 - NXP 整流二极管局域网超快软恢复二极管快速软恢复二极管
页数 文件大小 规格书
10页 143K
描述
Enhanced ultrafast dual rectifier diode

BYV410-600 技术参数

是否Rohs认证: 符合生命周期:Transferred
零件包装代码:TO-220AB包装说明:PLASTIC, SC-46, 3 PIN
针数:3Reach Compliance Code:not_compliant
HTS代码:8541.10.00.80风险等级:5.72
应用:ULTRA FAST SOFT RECOVERY外壳连接:CATHODE
配置:COMMON CATHODE, 2 ELEMENTS二极管元件材料:SILICON
二极管类型:RECTIFIER DIODE最大正向电压 (VF):2.1 V
JEDEC-95代码:TO-220ABJESD-30 代码:R-PSFM-T3
JESD-609代码:e3最大非重复峰值正向电流:132 A
元件数量:2相数:1
端子数量:3最高工作温度:150 °C
最大输出电流:20 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED认证状态:Not Qualified
最大重复峰值反向电压:600 V最大反向恢复时间:0.035 µs
子类别:Rectifier Diodes表面贴装:NO
端子面层:Tin (Sn)端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

BYV410-600 数据手册

 浏览型号BYV410-600的Datasheet PDF文件第2页浏览型号BYV410-600的Datasheet PDF文件第3页浏览型号BYV410-600的Datasheet PDF文件第4页浏览型号BYV410-600的Datasheet PDF文件第5页浏览型号BYV410-600的Datasheet PDF文件第6页浏览型号BYV410-600的Datasheet PDF文件第7页 
BYV410-600  
Enhanced ultrafast dual rectifier diode  
Rev. 01 — 29 June 2009  
Product data sheet  
1. Product profile  
1.1 General description  
Enhanced ultrafast dual rectifier diode in a SOT78 (TO-220AB) plastic package.  
1.2 Features and benefits  
„ High thermal cycling performance  
„ Low on state losses  
„ Low thermal resistance  
„ Soft recovery characteristic minimizes  
power consuming oscillations  
1.3 Applications  
„ Dual mode (DCM and CCM) PFC  
„ Power Factor Correction (PFC) for  
Interleaved Topology  
1.4 Quick reference data  
Table 1.  
Quick reference  
Symbol Parameter  
Conditions  
Min  
Typ  
Max Unit  
VRRM  
IO(AV)  
repetitive peak  
reverse voltage  
-
-
600  
V
average output  
current  
square-wave pulse; δ = 0.5;  
-
-
20  
A
T
mb 92 °C; both diodes  
conducting; see Figure 1;  
see Figure 2  
Dynamic characteristics  
trr  
reverse recovery  
time  
IF = 1 A; VR = 30 V;  
dIF/dt = 100 A/µs;  
Tj = 25 °C; see Figure 5  
-
-
20  
15  
35  
28  
ns  
C
Qr  
recovered charge  
IF = 1 A; VR = 30 V;  
dIF/dt = 100 A/µs  
Static characteristics  
VF forward voltage  
IF = 10 A; Tj = 150 °C  
-
-
1.3  
1.4  
1.9  
2.1  
V
V
IF = 10 A; Tj = 25 °C;  
see Figure 4  

与BYV410-600相关器件

型号 品牌 获取价格 描述 数据表
BYV410-600,127 NXP

获取价格

BYV410-600
BYV410-600P WEEN

获取价格

Dual ultrafast power diodes in a TO220 plastic package.
BYV410X-600 NXP

获取价格

Enhanced ultrafast dual rectifier diode
BYV410X-600 WEEN

获取价格

Dual enhanced ultrafast power diode in a TO220F plastic package.
BYV410X-600P WEEN

获取价格

Dual ultrafast power diodes
BYV415J-600P WEEN

获取价格

Dual ultrafast power diode
BYV415K-600P WEEN

获取价格

Dual ultrafast power diode
BYV415W-600P WEEN

获取价格

Dual ultrafast power diode
BYV42 NXP

获取价格

Rectifier diodes ultrafast, rugged
BYV42E NXP

获取价格

Rectifier diodes ultrafast, rugged