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BYV42EB-200T/R PDF预览

BYV42EB-200T/R

更新时间: 2024-11-09 13:00:19
品牌 Logo 应用领域
恩智浦 - NXP 二极管超快软恢复二极管快速软恢复二极管
页数 文件大小 规格书
7页 47K
描述
DIODE 15 A, 200 V, SILICON, RECTIFIER DIODE, PLASTIC, SMD, D2PAK-3, Rectifier Diode

BYV42EB-200T/R 技术参数

是否Rohs认证:符合生命周期:Obsolete
零件包装代码:TO-263包装说明:R-PSSO-G2
针数:3Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.10.00.80
风险等级:5.46Is Samacsys:N
应用:ULTRA FAST SOFT RECOVERY外壳连接:CATHODE
配置:COMMON CATHODE, 2 ELEMENTS二极管元件材料:SILICON
二极管类型:RECTIFIER DIODEJESD-30 代码:R-PSSO-G2
JESD-609代码:e3湿度敏感等级:1
最大非重复峰值正向电流:160 A元件数量:2
相数:1端子数量:2
最大输出电流:15 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED认证状态:Not Qualified
最大重复峰值反向电压:200 V最大反向恢复时间:0.028 µs
表面贴装:YES端子面层:TIN
端子形式:GULL WING端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

BYV42EB-200T/R 数据手册

 浏览型号BYV42EB-200T/R的Datasheet PDF文件第2页浏览型号BYV42EB-200T/R的Datasheet PDF文件第3页浏览型号BYV42EB-200T/R的Datasheet PDF文件第4页浏览型号BYV42EB-200T/R的Datasheet PDF文件第5页浏览型号BYV42EB-200T/R的Datasheet PDF文件第6页浏览型号BYV42EB-200T/R的Datasheet PDF文件第7页 
Philips Semiconductors  
Product specification  
Rectifier diodes  
ultrafast, rugged  
BYV42E, BYV42EB series  
FEATURES  
SYMBOL  
QUICK REFERENCE DATA  
VR = 150 V/ 200 V  
VF 0.85 V  
• Low forward volt drop  
• Fast switching  
• Soft recovery characteristic  
• Reverse surge capability  
• High thermal cycling performance  
• Low thermal resistance  
a1  
1
a2  
3
IO(AV) = 30 A  
IRRM = 0.2 A  
k
2
trr 28 ns  
GENERAL DESCRIPTION  
Dual, ultra-fast, epitaxial rectifier diodes intended for use as output rectifiers in high frequency switched mode power  
supplies.  
The BYV42E series is supplied in the SOT78 conventional leaded package.  
The BYV42EB series is supplied in the SOT404 surface mounting package.  
PINNING  
SOT78 (TO220AB)  
SOT404  
PIN  
DESCRIPTION  
anode 1 (a)  
cathode (k) 1  
tab  
tab  
1
2
2
3
anode 2 (a)  
cathode (k)  
1
3
1 2 3  
tab  
LIMITING VALUES  
Limiting values in accordance with the Absolute Maximum System (IEC 134).  
SYMBOL PARAMETER CONDITIONS MIN.  
BYV42E / BYV42EB  
MAX.  
UNIT  
-150  
150  
150  
150  
-200  
200  
200  
200  
VRRM  
VRWM  
VR  
Peak repetitive reverse voltage  
-
-
-
V
V
V
Crest working reverse voltage  
Continuous reverse voltage  
Tmb 144˚C  
IO(AV)  
IFRM  
IFSM  
Average rectified output current square wave  
-
30  
30  
A
(both diodes conducting)  
δ = 0.5; Tmb 108 ˚C  
Repetitive peak forward current t = 25 µs; δ = 0.5;  
-
A
per diode  
Non-repetitive peak forward  
current per diode  
Tmb 108 ˚C  
t = 10 ms  
-
-
150  
160  
A
A
t = 8.3 ms  
sinusoidal; with reapplied  
VRWM(max)  
Repetitive peak reverse current tp = 2 µs; δ = 0.001  
IRRM  
IRSM  
-
-
0.2  
0.2  
A
A
per diode  
Non-repetitive peak reverse  
current per diode  
tp = 100 µs  
Tstg  
Tj  
Storage temperature  
Operating junction temperature  
-40  
-
150  
150  
˚C  
˚C  
1. It is not possible to make connection to pin 2 of the SOT404 package  
2. SOT78 package, For output currents in excess of 20 A, the cathode connection should be made to the mounting  
tab.  
July 1998  
1
Rev 1.200  

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