Datasheet > BYV415J-600P

BYV415J-600P

更新时间： 2024-09-16 01:24:03

品牌	Logo	应用领域
瑞能 - WEEN		/
页数	文件大小	规格书
10页	366K
描述
Dual ultrafast power diode

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BYV415J-600P 数据手册

BYV415J-600P

Dual ultrafast power diode

Rev.01 - 17 December 2018

Product data sheet

1. General description

Dual ultrafast power diodes in a TO3PF plastic package.

2. Features and beneﬁts

•

Very low on-state loss

•

Reduces switching losses in associated MOSFET or IGBT

Low leakage current

Isolated plastic package

3. Applications

•

Active PFC in air conditioner

S.M.P.S Power Factor Correction (PFC)

Half-bridge / full-bridge switched-mode power supplies

4. Quick reference data

Table 1. Quick reference data

Symbol Parameter

Conditions

Values

Unit

Absolute maximum rating

V_R

repetitive peak reverse DC

voltage

600

I_F(AV)

I_FRM

I_FSM

average forward current δ = 0.5; T_h≤ 100 °C; square-wave pulse;

per diode; Fig. 1; Fig. 2; Fig. 3

repetitive peak forward δ = 0.5; t_p= 25 μs; T_h≤ 100 °C; square-

current

wave pulse; per diode

non-repetitive peak

forward current

t_p= 10 ms; T_j(init)= 25 °C; sine-wave pulse;

per diode; Fig. 4

150

165

t_p= 8.3 ms; T_j(init)= 25 °C; sine-wave pulse;

per diode

Symbol Parameter

Static characteristics

Conditions

Min

Typ

Max

Unit

V_F

forward voltage

I_F= 15 A; T_j= 25 °C; per diode; Fig. 6

I_F= 15 A; T_j= 150 °C; per diode; Fig. 6

1.4

1.1

2.1

1.4

Dynamic characteristics

t_rrreverse recovery time

I_F= 1 A; V_R= 30 V; dI_F/dt = 100 A/μs;

T_j= 25 °C; per diode; Fig. 7

I_F= 15 A; V_R= 400 V; dI_F/dt = 200 A/μs;

T_j= 25 °C; per diode; Fig. 7

I_F= 15 A; V_R= 400 V; dI_F/dt = 200 A/μs;

T_j= 125 °C; per diode; Fig. 7

12 3 4 5 6 7...10

中文翻译

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