Datasheet > BYV42E-200/B

BYV42E-200/B

更新时间： 2024-09-14 23:39:03

品牌	Logo	应用领域
其他 - ETC		二极管
页数	文件大小	规格书
6页	37K
描述
DIODE ULTRA FAST DUAL

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BYV42E-200/B 数据手册

Philips Semiconductors

Product specification

Rectifier diodes

ultrafast, rugged

BYV42E series

GENERAL DESCRIPTION

QUICK REFERENCE DATA

Glass passivated high efficiency

rugged dual rectifier diodes in a

plastic envelope, featuring low

forward voltage drop, ultra-fast

recovery times and soft recovery

characteristic. These devices can

withstand reverse voltage transients

and have guaranteed reverse surge

and ESD capability. They are

intended for use in switched mode

power supplies and high frequency

circuits in general where low

conduction and switching losses are

essential.

SYMBOL

PARAMETER

MAX. MAX. MAX. UNIT

BYV42E-

100

150

200

V_RRM

Repetitive peak reverse

voltage

Forward voltage

Output current (both

diodes conducting)

Reverse recovery time

Repetitive peak reverse

current per diode

V_F

I_O(AV)

0.85

t_rr

I_RRM

0.2

PINNING - TO220AB

PIN CONFIGURATION

SYMBOL

DESCRIPTION

anode 1 (a)

tab

cathode (k)

anode 2 (a)

tab cathode (k)

1 2 3

LIMITING VALUES

Limiting values in accordance with the Absolute Maximum System (IEC 134).

SYMBOL PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

-100

100

-150

150

-200

200

V_RRM

V_RWM

V_R

Repetitive peak reverse voltage

Crest working reverse voltage

Continuous reverse voltage¹

I_O(AV)

Output current (both diodes

conducting)²

square wave

δ = 0.5; T_mb≤ 108 ˚C

sinusoidal

a = 1.57; T_mb≤ 111 ˚C

I_O(RMS)

I_FRM

RMS forward current

Repetitive peak forward current t = 25 µs; δ = 0.5;

per diode

T_mb≤ 108 ˚C

I_FSM

Non-repetitive peak forward

current per diode

t = 10 ms

150

160

t = 8.3 ms

sinusoidal; with reapplied

V_RWM(max)

I²t

I_RRM

I²t for fusing

t = 10 ms

112

0.2

A²s

Repetitive peak reverse current t_p= 2 µs; δ = 0.001

per diode

I_RSM

Non-repetitive peak reverse

current per diode

t_p= 100 µs

0.2

T_stg

T_j

Storage temperature

-40

150

˚C

Operating junction temperature

1 T_mb≤ 144˚C for thermal stability.

2 Neglecting switching and reverse current losses.

For output currents in excess of 20 A, connection should be made to the exposed metal mounting base.

October 1994

Rev 1.100

12 3 4 5 6

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BYV42EB	NXP	获取价格	Rectifier diodes ultrafast, rugged
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BYV42EB-100	NXP	获取价格	DIODE 30 A, 100 V, SILICON, RECTIFIER DIODE, Rectifier Diode
BYV42EB100T/R	PHILIPS	获取价格	Rectifier Diode, 30A, 100V V(RRM),
BYV42EB-100T/R	NXP	获取价格	DIODE 30 A, 100 V, SILICON, RECTIFIER DIODE, Rectifier Diode
BYV42EB-150	NXP	获取价格	Rectifier diodes ultrafast, rugged
BYV42EB-150T/R	NXP	获取价格	DIODE 15 A, 150 V, SILICON, RECTIFIER DIODE, Rectifier Diode
BYV42EB-200	NXP	获取价格	Rectifier diodes ultrafast, rugged
BYV42EB-200	WEEN	获取价格	Dual ultrafast power diode in a SOT404 (D2PAK) surface-mountable plastic
BYV42EB-200,118	NXP	获取价格	BYV42EB-200