Datasheet > BYV430K-300P

BYV430K-300P

更新时间： 2022-02-26 14:16:50

品牌	Logo	应用领域
瑞能 - WEEN		/
页数	文件大小	规格书
11页	340K
描述
Dual ultrafast power diode

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BYV430K-300P 数据手册

BYV430K-300P

Dual ultrafast power diode

26 September 2018

Product data sheet

1. General description

2x30A, 300V Dual ultrafast power diode in a SOT1259 (3-lead TO-3P) plastic package.

2. Features and benefits

•

Low forward voltage drop

Fast Switching

•

Soft recovery characteristics

High thermal cycling performance

Low thermal resistance

3. Applications

•

Telecom power supplies

Welding machines

Secondary rectification in SMPS

4. Quick reference data

Table 1. Quick reference data

Symbol

V_R

Parameter

Conditions

Min

Typ

Max

300

Unit

reverse voltage

I_F(AV)

average forward

current

δ = 0.5 ; T_mb≤ 105 °C; square-wave

pulse; Fig. 1; Fig. 2; Fig. 3

I_FSM

non-repetitive peak

forward current

t_p= 10 ms; T_j(init)= 25 °C; sine-wave

pulse; per diode; Fig. 4

300

330

t_p= 8.3 ms; T_j(init)= 25 °C; sine-wave

pulse; per diode

Static characteristics

V_F

forward voltage

I_F= 30 A; T_j= 25 °C; Fig. 6

I_F= 30 A; T_j= 150 °C; Fig. 6

1.25

0.85

Dynamic characteristics

t_rr

reverse recovery time I_F= 1 A; V_R= 30 V; dI_F/dt = 50 A/µs;

T_j= 25 °C; Fig. 7

12 3 4 5 6 7...11

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