Datasheet > BYV430K-300P

BYV430K-300P

更新时间： 2022-02-26 14:16:50

品牌	Logo	应用领域
瑞能 - WEEN		/
页数	文件大小	规格书
11页	340K
描述
Dual ultrafast power diode

阅读下载

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

BYV430K-300P 数据手册

WeEn Semiconductors

BYV430K-300P

Dual ultrafast power diode

8. Thermal characteristics

Table 5. Thermal characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

R_th(j-mb)

thermal resistance

from junction to

mounting base

with heatsink compound; per diode;

Fig. 5

0.8

K/W

with heatsink compound; both diodes

conducting

1.2

K/W

R_th(j-a)

thermal resistance

from junction to

ambient free air

in free air

aaa-014272

th(j-mb)

(K/W)

-1

-2

-3

-4

δ = 0.5

δ = 0.3

δ = 0.1

δ =

δ = 0.05

single pulse

-6

-5

-4

-3

-2

-1

(s)

Fig. 5. Transient thermal impedance from junction to mounting base as a function of pulse duration

BYV430K-300P

All information provided in this document is subject to legal disclaimers.

Product data sheet

26 September 2018

5 / 11

1 2 3 456 7 8...11

下载PDF

与BYV430K-300P相关器件

型号	品牌	描述	获取价格	数据表
BYV430W-300P	WEEN	Dual ultrafast power diode	获取价格
BYV430W-600P	WEEN	Dual ultrafast power diode	获取价格
BYV44	NXP	Dual rectifier diodes ultrafast	获取价格
BYV44-300	NXP	Dual rectifier diodes ultrafast	获取价格
BYV44-400	NXP	Dual rectifier diodes ultrafast	获取价格
BYV44-500	NXP	Dual rectifier diodes ultrafast	获取价格