5秒后页面跳转
BYV44SERIES PDF预览

BYV44SERIES

更新时间: 2024-01-27 01:16:40
品牌 Logo 应用领域
其他 - ETC 整流二极管
页数 文件大小 规格书
5页 48K
描述
Dual rectifier diodes ultrafast

BYV44SERIES 技术参数

生命周期:Active包装说明:R-PSFM-T3
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.71
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
JEDEC-95代码:TO-220ABJESD-30 代码:R-PSFM-T3
元件数量:2端子数量:3
最大输出电流:30 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
认证状态:Not Qualified最大重复峰值反向电压:500 V
最大反向恢复时间:0.05 µs表面贴装:NO
端子形式:THROUGH-HOLE端子位置:SINGLE
Base Number Matches:1

BYV44SERIES 数据手册

 浏览型号BYV44SERIES的Datasheet PDF文件第2页浏览型号BYV44SERIES的Datasheet PDF文件第3页浏览型号BYV44SERIES的Datasheet PDF文件第4页浏览型号BYV44SERIES的Datasheet PDF文件第5页 
Philips Semiconductors  
Product specification  
Dual rectifier diodes  
ultrafast  
BYV44 series  
FEATURES  
SYMBOL  
QUICK REFERENCE DATA  
• Low forward volt drop  
• Fast switching  
• Soft recovery characteristic  
• High thermal cycling performance  
• Low thermal resistance  
VR = 300 V/ 400 V/ 500 V  
a1  
1
a2  
3
VF 1.12 V  
IO(AV) = 30 A  
trr 60 ns  
k
2
GENERAL DESCRIPTION  
PINNING  
SOT78 (TO220AB)  
Dual, common cathode, ultra-fast,  
epitaxial rectifier diodes intended  
for use as output rectifiers in high  
frequency switched mode power  
supplies.  
PIN  
DESCRIPTION  
anode 1  
cathode  
tab  
1
2
The BYV44 series is supplied in the  
3
anode 2  
cathode  
conventional  
leaded  
SOT78  
(TO220AB) package.  
tab  
1 2 3  
LIMITING VALUES  
Limiting values in accordance with the Absolute Maximum System (IEC 134).  
SYMBOL PARAMETER CONDITIONS  
MIN.  
MAX.  
UNIT  
BYV44  
-300  
300  
300  
300  
-400  
400  
400  
400  
-500  
500  
500  
500  
VRRM  
VRWM  
VR  
Peak repetitive reverse voltage  
Crest working reverse voltage  
Continuous reverse voltage  
-
-
-
V
V
V
Tmb 136˚C  
IO(AV)  
IFRM  
IFSM  
Average rectified output current square wave; δ = 0.5;  
-
30  
A
(both diodes conducting)1  
Tmb 94 ˚C  
Repetitive peak forward current t = 25 µs; δ = 0.5;  
-
30  
A
per diode  
Non-repetitive peak forward  
current per diode.  
Tmb 94 ˚C  
t = 10 ms  
-
-
150  
160  
A
A
t = 8.3 ms  
sinusoidal; with reapplied  
VRRM(max)  
Tstg  
Tj  
Storage temperature  
Operating junction temperature  
-40  
-
150  
150  
˚C  
˚C  
THERMAL RESISTANCES  
SYMBOL PARAMETER  
CONDITIONS  
MIN. TYP. MAX. UNIT  
Rth j-hs  
Thermal resistance junction to per diode  
-
-
-
-
-
60  
2.4  
1.4  
-
K/W  
K/W  
K/W  
heatsink  
both diodes conducting  
Rth j-a  
Thermal resistance junction to in free air.  
ambient  
1 Neglecting switching and reverse current losses.  
For output currents in excess of 20 A, the cathode connection should be made to the metal mounting tab.  
October 1998  
1
Rev 1.400  

与BYV44SERIES相关器件

型号 品牌 描述 获取价格 数据表
BYV4MD-600P WEEN Ultrafast power diode in a TO252 (DPAK) plastic package

获取价格

BYV-50 MICROSEMI RECTIFIERS

获取价格

BYV50MW-650PT2 WEEN Ultrafast power diode in a TO247-2L plastic package.

获取价格

BYV52 STMICROELECTRONICS HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES

获取价格

BYV52-100 STMICROELECTRONICS 30A, 100V, SILICON, RECTIFIER DIODE

获取价格

BYV52-150 STMICROELECTRONICS 30A, 150V, SILICON, RECTIFIER DIODE

获取价格