Datasheet > BYV50MW-650PT2

BYV50MW-650PT2

更新时间： 2024-11-21 17:02:07

品牌	Logo	应用领域
瑞能 - WEEN		/
页数	文件大小	规格书
10页	507K
描述
Ultrafast power diode in a TO247-2L plastic package.

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BYV50MW-650PT2 数据手册

BYV50MW-650PT2

Ultrafast power diode

Rev.01 - 14 December 2023

Product data sheet

1. General description

Ultrafast power diode in a TO247-2L plastic

package.

alogen-Free

RoHS

2. Features and beneﬁts

•

650V FRD

•

Low thermal resistance

Low forward voltage drop

Low leakage current & reverse recovery current

Enhanced Eas capability suitable for industrical application

Reduces switching losses in associated MOSFET or IGBT

Package meets UL94 V-0 which guaranteed by Epoxy Mold Compound

3. Applications

•

NPC-I in UPS

LLC in EV charger

PFC in air conditioner or welding machine

Power Factor Correction (PFC)

2^ndrectiﬁcation in HB/FB SMPS

4. Quick reference data

Table 1. Quick reference data

Symbol Parameter

Conditions

Values

Unit

Absolute maximum rating

V_RRM

I_F(AV)

I_FRM

repetitive peak reverse

voltage

650

average forward current δ = 0.5; T_mb≤ 123 °C; square-wave pulse;

Fig. 1; Fig. 2; Fig. 3

repetitive peak forward δ = 0.5; t_p= 25 μs; T_mb≤ 123 °C;

current

100

600

660

square-wave pulse

I_FSM

non-repetitive peak

forward current

t_p= 10 ms; T_j(init)= 25 °C; sine-wave pulse;

Fig. 4

t_p= 8.3 ms; T_j(init)= 25 °C; sine-wave pulse

Symbol Parameter

Static characteristics

Conditions

Min

Typ

Max

Unit

V_F

forward voltage

I_F= 50 A; T_j= 25 °C; Fig. 6

I_F= 50 A; T_j= 150 °C; Fig. 6

1.35

1.05

1.70

1.40

Dynamic characteristics

t_rrreverse recovery time

I_F= 1 A; V_R= 30 V; dI_F/dt = 100 A/μs;

T_j= 25 °C; Fig. 7

12 3 4 5 6 7...10

中文翻译

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