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BYV42F-200 PDF预览

BYV42F-200

更新时间: 2024-01-22 20:14:42
品牌 Logo 应用领域
恩智浦 - NXP 整流二极管局域网超快软恢复二极管快速软恢复二极管
页数 文件大小 规格书
7页 58K
描述
Rectifier diodes ultrafast, rugged

BYV42F-200 技术参数

是否Rohs认证: 不符合生命周期:Transferred
Reach Compliance Code:unknown风险等级:5.84
Is Samacsys:N二极管类型:RECTIFIER DIODE
最大正向电压 (VF):1.2 VJESD-609代码:e0
最大非重复峰值正向电流:160 A最高工作温度:150 °C
最大输出电流:20 A最大重复峰值反向电压:200 V
子类别:Rectifier Diodes表面贴装:NO
端子面层:Tin/Lead (Sn/Pb)Base Number Matches:1

BYV42F-200 数据手册

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Philips Semiconductors  
Product specification  
Rectifier diodes  
ultrafast, rugged  
BYV42F, BYV42EX series  
FEATURES  
SYMBOL  
QUICK REFERENCE DATA  
• Low forward volt drop  
• Fast switching  
• Soft recovery characteristic  
• Reverse surge capability  
• High thermal cycling performance  
• Isolated mounting tab  
VR = 150 V/ 200 V  
a1  
1
a2  
3
VF 0.9 V  
IO(AV) = 20 A  
IRRM = 0.2 A  
trr 28 ns  
k
2
GENERAL DESCRIPTION  
Dual, ultra-fast, epitaxial rectifier diodes intended for use as output rectifiers in high frequency switched mode power  
supplies.  
The BYV42F series is supplied in the SOT186 package.  
The BYV42EX series is supplied in the SOT186A package.  
PINNING  
SOT186  
SOT186A  
PIN  
DESCRIPTION  
anode 1 (a)  
cathode (k)  
case  
case  
1
2
3
anode 2 (a)  
isolated  
1
2
3
1
2 3  
tab  
LIMITING VALUES  
Limiting values in accordance with the Absolute Maximum System (IEC 134).  
SYMBOL PARAMETER CONDITIONS MIN.  
BYV42F / BYV42EX  
MAX.  
UNIT  
-150  
150  
150  
150  
-200  
200  
200  
200  
VRRM  
VRWM  
VR  
Peak repetitive reverse voltage  
-
-
-
V
V
V
Crest working reverse voltage  
Continuous reverse voltage  
Ths 125˚C  
IO(AV)  
IFRM  
IFSM  
Average rectified output current square wave  
-
20  
30  
A
(both diodes conducting)1  
δ = 0.5; Ths 78 ˚C  
Repetitive peak forward current t = 25 µs; δ = 0.5;  
-
A
per diode  
Non-repetitive peak forward  
current per diode  
Ths 78 ˚C  
t = 10 ms  
-
-
150  
160  
A
A
t = 8.3 ms  
sinusoidal; with reapplied  
VRWM(max)  
Repetitive peak reverse current tp = 2 µs; δ = 0.001  
IRRM  
IRSM  
-
-
0.2  
0.2  
A
A
per diode  
Non-repetitive peak reverse  
current per diode  
tp = 100 µs  
Tstg  
Tj  
Storage temperature  
Operating junction temperature  
-40  
-
150  
150  
˚C  
˚C  
1 Neglecting switching and reverse current losses.  
October 1998  
1
Rev 1.300  

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