Philips Semiconductors
Product specification
Rectifier diodes
ultrafast, rugged
BYV42E, BYV42EB series
FEATURES
SYMBOL
QUICK REFERENCE DATA
VR = 150 V/ 200 V
VF ≤ 0.85 V
• Low forward volt drop
• Fast switching
• Soft recovery characteristic
• Reverse surge capability
• High thermal cycling performance
• Low thermal resistance
a1
1
a2
3
IO(AV) = 30 A
IRRM = 0.2 A
k
2
trr ≤ 28 ns
GENERAL DESCRIPTION
Dual, ultra-fast, epitaxial rectifier diodes intended for use as output rectifiers in high frequency switched mode power
supplies.
The BYV42E series is supplied in the SOT78 conventional leaded package.
The BYV42EB series is supplied in the SOT404 surface mounting package.
PINNING
SOT78 (TO220AB)
SOT404
PIN
DESCRIPTION
anode 1 (a)
cathode (k) 1
tab
tab
1
2
2
3
anode 2 (a)
cathode (k)
1
3
1 2 3
tab
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN.
BYV42E / BYV42EB
MAX.
UNIT
-150
150
150
150
-200
200
200
200
VRRM
VRWM
VR
Peak repetitive reverse voltage
-
-
-
V
V
V
Crest working reverse voltage
Continuous reverse voltage
Tmb ≤ 144˚C
IO(AV)
IFRM
IFSM
Average rectified output current square wave
-
30
30
A
(both diodes conducting)
δ = 0.5; Tmb ≤ 108 ˚C
Repetitive peak forward current t = 25 µs; δ = 0.5;
-
A
per diode
Non-repetitive peak forward
current per diode
Tmb ≤ 108 ˚C
t = 10 ms
-
-
150
160
A
A
t = 8.3 ms
sinusoidal; with reapplied
VRWM(max)
Repetitive peak reverse current tp = 2 µs; δ = 0.001
IRRM
IRSM
-
-
0.2
0.2
A
A
per diode
Non-repetitive peak reverse
current per diode
tp = 100 µs
Tstg
Tj
Storage temperature
Operating junction temperature
-40
-
150
150
˚C
˚C
1. It is not possible to make connection to pin 2 of the SOT404 package
2. SOT78 package, For output currents in excess of 20 A, the cathode connection should be made to the mounting
tab.
July 1998
1
Rev 1.200