5秒后页面跳转
BYV42 PDF预览

BYV42

更新时间: 2024-11-08 22:08:47
品牌 Logo 应用领域
恩智浦 - NXP 二极管
页数 文件大小 规格书
7页 47K
描述
Rectifier diodes ultrafast, rugged

BYV42 数据手册

 浏览型号BYV42的Datasheet PDF文件第2页浏览型号BYV42的Datasheet PDF文件第3页浏览型号BYV42的Datasheet PDF文件第4页浏览型号BYV42的Datasheet PDF文件第5页浏览型号BYV42的Datasheet PDF文件第6页浏览型号BYV42的Datasheet PDF文件第7页 
Philips Semiconductors  
Product specification  
Rectifier diodes  
ultrafast, rugged  
BYV42E, BYV42EB series  
FEATURES  
SYMBOL  
QUICK REFERENCE DATA  
VR = 150 V/ 200 V  
VF 0.85 V  
• Low forward volt drop  
• Fast switching  
• Soft recovery characteristic  
• Reverse surge capability  
• High thermal cycling performance  
• Low thermal resistance  
a1  
1
a2  
3
IO(AV) = 30 A  
IRRM = 0.2 A  
k
2
trr 28 ns  
GENERAL DESCRIPTION  
Dual, ultra-fast, epitaxial rectifier diodes intended for use as output rectifiers in high frequency switched mode power  
supplies.  
The BYV42E series is supplied in the SOT78 conventional leaded package.  
The BYV42EB series is supplied in the SOT404 surface mounting package.  
PINNING  
SOT78 (TO220AB)  
SOT404  
PIN  
DESCRIPTION  
anode 1 (a)  
cathode (k) 1  
tab  
tab  
1
2
2
3
anode 2 (a)  
cathode (k)  
1
3
1 2 3  
tab  
LIMITING VALUES  
Limiting values in accordance with the Absolute Maximum System (IEC 134).  
SYMBOL PARAMETER CONDITIONS MIN.  
BYV42E / BYV42EB  
MAX.  
UNIT  
-150  
150  
150  
150  
-200  
200  
200  
200  
VRRM  
VRWM  
VR  
Peak repetitive reverse voltage  
-
-
-
V
V
V
Crest working reverse voltage  
Continuous reverse voltage  
Tmb 144˚C  
IO(AV)  
IFRM  
IFSM  
Average rectified output current square wave  
-
30  
30  
A
(both diodes conducting)  
δ = 0.5; Tmb 108 ˚C  
Repetitive peak forward current t = 25 µs; δ = 0.5;  
-
A
per diode  
Non-repetitive peak forward  
current per diode  
Tmb 108 ˚C  
t = 10 ms  
-
-
150  
160  
A
A
t = 8.3 ms  
sinusoidal; with reapplied  
VRWM(max)  
Repetitive peak reverse current tp = 2 µs; δ = 0.001  
IRRM  
IRSM  
-
-
0.2  
0.2  
A
A
per diode  
Non-repetitive peak reverse  
current per diode  
tp = 100 µs  
Tstg  
Tj  
Storage temperature  
Operating junction temperature  
-40  
-
150  
150  
˚C  
˚C  
1. It is not possible to make connection to pin 2 of the SOT404 package  
2. SOT78 package, For output currents in excess of 20 A, the cathode connection should be made to the mounting  
tab.  
July 1998  
1
Rev 1.200  

与BYV42相关器件

型号 品牌 获取价格 描述 数据表
BYV42E NXP

获取价格

Rectifier diodes ultrafast, rugged
BYV42E100 PHILIPS

获取价格

Rectifier Diode, 30A, 100V V(RRM),
BYV42E-100 NXP

获取价格

Rectifier diodes ultrafast, rugged
BYV42E-150 NXP

获取价格

Rectifier diodes ultrafast, rugged
BYV42E-150 WEEN

获取价格

Dual ultrafast power diode in a SOT78 (TO-220AB) plastic package.
BYV42E-150/B ETC

获取价格

DIODE ULTRA FAST DUAL
BYV42E-200 NXP

获取价格

Rectifier diodes ultrafast, rugged
BYV42E-200 WEEN

获取价格

Dual ultrafast power diode in a SOT78 (TO-220AB) plastic package.
BYV42E-200,127 NXP

获取价格

BYV42E-200
BYV42E-200/B ETC

获取价格

DIODE ULTRA FAST DUAL