Datasheet > BYV410X-600P

BYV410X-600P

更新时间： 2024-09-16 01:24:03

品牌	Logo	应用领域
瑞能 - WEEN		二极管
页数	文件大小	规格书
10页	525K
描述
Dual ultrafast power diodes

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中文翻译

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技术参数
数据手册

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BYV410X-600P 技术参数

生命周期：	Active	Reach Compliance Code：	unknown
风险等级：	5.84	二极管类型：	RECTIFIER DIODE

BYV410X-600P 数据手册

BYV410X-600P

Dual ultrafast power diodes

Rev.01 - 20 June 2018

Product data sheet

1. General description

Ultrafast power diode in a SOT186A plastic package.

2. Features and benefit

•

Low forward voltage drop

•

Low leakage current

Soft reverse recovery characteristics

High thermal cycling performance

3. Applications

•

Home appliance power supply

•

Discontinuous Current Mode (DCM) Power Factor Correction (PFC)

4. Quick reference data

Table 1. Quick reference data

Symbol Parameter

Conditions

Values

Unit

Absolute maximum rating

V_RRM

repetitive peak reverse

voltage

600

I_O(AV)

average output current

δ = 0.5 ; square-wave pulse; T_h≤ 65 °C;

both diodes conducting;

Fig. 1; Fig. 2; Fig. 3

I_FRM

I_FSM

repetitive peak forward δ = 0.5 ; t_p= 25 μs; T_h≤ 97 °C;

current

square-wave pulse ; per diode

non-repetitive peak

forward current

t_p= 10 ms; T_j(init)= 25 °C; sine-wave pulse;

per diode; Fig. 4

120

132

t_p= 8.3 ms; T_j(init)= 25 °C; sine-wave pulse;

per diode

Symbol Parameter

Static characteristics

Conditions

Min

Typ

Max

Unit

V_F

forward voltage

I_F= 10 A; T_j= 25 °C; per diode; Fig. 6

I_F= 10 A; T_j= 150 °C; per diode; Fig. 6

1.3

1.0

1.7

1.35

Dynamic characteristics

t_rrreverse recovery time

I_F= 1 A; V_R= 30 V; dI_F/dt = 100 A/μs;

T_j= 25 °C; per diode; Fig. 7

12 3 4 5 6 7...10

中文翻译

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