Datasheet > BYV410-600P

BYV410-600P

更新时间： 2024-11-10 17:01:07

品牌	Logo	应用领域
瑞能 - WEEN		/
页数	文件大小	规格书
10页	408K
描述
Dual ultrafast power diodes in a TO220 plastic package.

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BYV410-600P 数据手册

BYV410-600P

Dual ultrafast power diode

Rev.01 - 20 November 2019

Product data sheet

1. General description

Dual ultrafast power diodes in a TO220 plastic package.

2. Features and beneﬁts

•

Low forward voltage drop

•

Low leakage current

Soft reverse recovery characteristics

High thermal cycling performance

3. Applications

•

Home appliance power supply

Discontinuous Current Mode (DCM) Power Factor Correction (PFC)

4. Quick reference data

Table 1. Quick reference data

Symbol Parameter

Conditions

Values

Unit

Absolute maximum rating

V_R

repetitive peak reverse DC

voltage

600

I_O(AV)

I_FRM

I_FSM

average forward current δ = 0.5; T_mb≤ 124 °C; square-wave pulse;

both diodes conducting

repetitive peak forward δ = 0.5; t_p= 25 μs; T_mb≤ 140 °C;

current

square-wave pulse; per diode

non-repetitive peak

forward current

t_p= 10 ms; T_j(init)= 25 °C; sine-wave pulse;

per diode; Fig. 4

120

132

t_p= 8.3 ms; T_j(init)= 25 °C; sine-wave pulse;

per diode

Symbol Parameter

Static characteristics

Conditions

Min

Typ

Max

Unit

V_F

forward voltage

I_F= 10 A; T_j= 25 °C; per diode; Fig. 6

I_F= 10 A; T_j= 150 °C; per diode; Fig. 6

1.3

1.0

1.7

1.35

Dynamic characteristics

t_rrreverse recovery time

I_F= 1 A; V_R= 30 V; dI_F/dt = 100 A/μs;

T_j= 25 °C; per diode; Fig. 7

I_F= 1 A; V_R= 30 V; dI_F/dt = 50 A/μs;

T_j= 25 °C; per diode; Fig. 7

I_F= 0.5 A; I_rr= 0.25 A; I_R= 1 A;

T_j= 25 °C; per diode

12 3 4 5 6 7...10

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