Datasheet > BYG10J-E3

BYG10J-E3

更新时间： 2024-09-27 03:58:15

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
5页	98K
描述
DIODE 1.5 A, 600 V, SILICON, RECTIFIER DIODE, DO-214AC, PLASTIC, SMA, 2 PIN, Rectifier Diode

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中文翻译

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数据手册

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BYG10J-E3 数据手册

BYG10

Vishay Semiconductors

VISHAY

Standard Avalanche Sinterglass Diode

Features

• Controlled avalanche characteristics

• Glass passivated junction

• Low reverse current

• High surge current capability

• Wave and reflow solderable

15811

Applications

Surface mounting

General purpose rectifier

Parts Table

Part

Type differentiation

Package

BYG10D

BYG10G

BYG10J

BYG10K

BYG10M

BYG10Y

V_R= 200 V @ I_FAV= 1.5 A

DO-214AC

_R= 400 V @ I_FAV= 1.5 A

_R= 600 V @ I_FAV= 1.5 A

_R= 800 V @ I_FAV= 1.5 A

DO-214AC

V_R= 1000 V @ I_FAV= 1.5 A

_R= 1600 V @ I_FAV= 1.5 A

Absolute Maximum Ratings

T_amb= 25 °C, unless otherwise specified

Parameter

Test condition

Part

Symbol

Value

200

Unit

Reverse voltage = Repetitive

peak reverse voltage

BYG10D

V_R= V_RRM

BYG10G

BYG10J

BYG10K

BYG10M

BYG10Y

V_R= V_RRM

400

600

_R= V_RRM

I_FSM

800

1000

1600

Peak forward surge current

Average forward current

t_p= 10 ms, half sinewave

I_FAV

1.5

Junction and storage

temperature range

T_j= T_stg

- 55 to + 150

°C

Pulse energy in avalanche

mode, non repetitive (inductive

load switch off)

_(BR)R= 1 A, T_j= 25 °C

BYG10D-

BYG10M

E_R

Document Number 86008

Rev. 1.5, 09-Oct-00

www.vishay.com

12 3 4 5

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BYG10K-E3	VISHAY	获取价格	DIODE 1.5 A, 800 V, SILICON, RECTIFIER DIODE, DO-214AC, PLASTIC, SMA, 2 PIN, Rectifier Dio