Datasheet > BYG10K-HE3/TR3

BYG10K-HE3/TR3

更新时间： 2024-09-27 03:33:11

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
5页	89K
描述
DIODE 1.5 A, 800 V, SILICON, RECTIFIER DIODE, DO-214AC, ROHS COMPLIANT, PLASTIC, SMD, SMA, 2 PIN, Rectifier Diode

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BYG10K-HE3/TR3 数据手册

BYG10D thru BYG10Y

Vishay General Semiconductor

www.vishay.com

Standard Avalanche SMD Rectifier

FEATURES

• Low profile package

• Ideal for automated placement

• Controlled avalanche characteristics

• Glass passivated junction

• Low reverse current

• High surge current capability

• Meets MSL level 1, per J-STD-020, LF maximum peak of

260 °C

DO-214AC (SMA)

• AEC-Q101 qualified

• Compliant to RoHS Directive 2002/95/EC and in

accordance to WEEE 2002/96/EC

TYPICAL APPLICATIONS

For use in general purpose rectification of power supplies,

inverters, converters and freewheeling diodes for consumer,

automotive and telecommunication.

PRIMARY CHARACTERISTICS

I_F(AV)

1.5 A

V_RRM

I_FSM

I_R

200 V to 1600 V

30 A

MECHANICAL DATA

Case: DO-214AC (SMA)

Molding compound meets UL 94 V-0 flammability rating

Base P/N-E3 - RoHS compliant, commercial grade

Base P/NHE3 - RoHS compliant, AEC-Q101 qualified

1.0 μA

V_F

1.15 V

E_R

20 mJ

T_Jmax.

150 °C

Terminals: Matte tin plated leads, solderable per J-STD-002

and JESD 22-B102

E3 suffix meets JESD 201 class 1A whisker test, HE3 suffix

meets JESD 201 class 2 whisker test

Note

•

BYG10Y for commercial grade only

Polarity: Color band denotes the cathode end

MAXIMUM RATINGS (T_A= 25 °C unless otherwise noted)

PARAMETER

SYMBOL BYG10D BYG10G BYG10J BYG10K BYG10M BYG10Y UNIT

Device marking code

BYG10D BYG10G BYG10J BYG10K BYG10M BYG10Y

Maximum repetitive peak reverse voltage

Average forward current

V_RRM

I_F(AV)

200

400

600

800

1000

1600

1.5

Peak forward surge current 10 ms single half

sine-wave superimposed on rated load

I_FSM

Pulse energy in avalanche mode,

non repetitive (inductive load switch off)

E_R

°C

I_(BR)R= 1 A, T_J= 25 °C (for BYG10D thru BYG10M)

Operating junction and storage temperature range T_J, T_STG

- 55 to + 150

Revision: 21-Dec-11

Document Number: 88957

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3 4 5

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与BYG10K-HE3/TR3相关器件

型号	品牌	获取价格	描述	数据表
BYG10K-M3/TR3	VISHAY	获取价格	DIODE 1.5 A, 800 V, SILICON, RECTIFIER DIODE, DO-214AC, HALOGEN FREE AND ROHS COMPLIANT, P
BYG10KTR	VISHAY	获取价格	Rectifier Diode, Avalanche, 1 Phase, 1 Element, 1.5A, 800V V(RRM), Silicon, DO-214
BYG10M	SUNMATE	获取价格	1.5A patch fast recovery diode 1000V SMA series
BYG10M	VISHAY	获取价格	Silicon Mesa SMD Rectifier
BYG10M	TAYCHIPST	获取价格	Silicon Mesa SMD Rectifier
BYG10M	HOTTECH	获取价格	SMA(DO-214AC)
BYG10M-AQ	DIOTEC	获取价格	Rectifier Diode,
BYG10M-E3	VISHAY	获取价格	DIODE 1.5 A, 1000 V, SILICON, RECTIFIER DIODE, DO-214AC, PLASTIC, SMA, 2 PIN, Rectifier Di
BYG10M-HE3/TR	VISHAY	获取价格	DIODE 1.5 A, 1000 V, SILICON, RECTIFIER DIODE, DO-214AC, ROHS COMPLIANT, PLASTIC, SMD, SMA
BYG10M-HE3/TR3	VISHAY	获取价格	DIODE 1.5 A, 1000 V, SILICON, RECTIFIER DIODE, DO-214AC, ROHS COMPLIANT, PLASTIC, SMD, SMA

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