BYG10M

更新时间： 2024-10-28 22:28:03

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
5页	63K
描述
Silicon Mesa SMD Rectifier

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中文翻译

获取价格

数据手册

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BYG10M 数据手册

BYG10

Vishay Telefunken

Silicon Mesa SMD Rectifier

Features

Controlled avalanche characteristics

Glass passivated junction

Low reverse current

High surge current capability

Wave and reflow solderable

15 811

Applications

Surface mounting

General purpose rectifier

Absolute Maximum Ratings

T = 25 C

Parameter

Reverse voltage

=Repetitive peak reverse voltage

Test Conditions

Type

Symbol

Value

200

400

600

800

1000

Unit

BYG10D

BYG10G

BYG10J

BYG10K

V =V

RRM

V =V

BYG10M V =V

Peak forward surge current

Average forward current

Junction and storage

temperature range

t =10ms,

half sinewave

FSM

1.5

–55...+150

FAV

T =T

stg

Pulse energy in avalanche mode,

non repetitive

=1A, T =25 C

(BR)R

(inductive load switch off)

Maximum Thermal Resistance

T = 25 C

Parameter

Junction lead

Junction ambient mounted on epoxy–glass hard tissue

Test Conditions

Symbol Value

Unit

K/W

T =const.

thJL

thJA

150

125

100

mounted on epoxy–glass hard tissue, 50mm 35 m Cu

mounted on Al–oxid–ceramic (Al O ), 50mm 35 m Cu

Document Number 86008

Rev. 3, 24-Jun-98

www.vishay.de • FaxBack +1-408-970-5600

1 (5)

12 3 4 5

中文翻译

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