BYG20D - BYG20J
Taiwan Semiconductor
CREAT BY ART
1.5A, 200V - 600V High Efficient Surface Mount Rectifiers
FEATURES
- Glass passivated junction chip
- Ideal for automated placement
- Fast switching for high efficiency
- High surge current capability
- Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
- Halogen-free according to IEC 61249-2-21 definition
DO-214AC (SMA)
MECHANICAL DATA
Case: DO-214AC (SMA)
Molding compound, UL flammability classification rating 94V-0
Part No. with suffix "H" means AEC-Q101 qualified
Packing code with suffix "G" means green compound (halogen-free)
Moisture sensitivity level: level 1, per J-STD-020
Terminal: Matte tin plated leads, solderable per JESD22-B102
Meet JESD 201 class 2 whisker test
Polarity: Indicated by cathode band
Weight: 0.064 g (approximately)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted)
PARAMETER
BYG20D
200
BYG20G
400
BYG20J
600
SYMBOL
VRRM
UNIT
Maximum repetitive peak reverse voltage
Maximum RMS voltage
V
V
V
A
VRMS
140
280
420
Maximum DC blocking voltage
Maximum average forward rectified current
VDC
200
400
600
IF(AV)
1.5
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load
IFSM
30
A
V
IF=1.0A
1.3
1.4
1
Maximum instantaneous forward voltage
(Note 1)
VF
IF=1.5A
TJ=25°C
TJ=100°C
Maximum reverse current @ rated VR
IR
μA
mJ
10
Pulse energy in avalanche mode, non repetitive
(Inductive load switch off ), L=120mH
ERSM
20
Maximum reverse recovery time (Note 2)
Typical thermal resistance
trr
75
ns
°C/W
°C
RθJA
TJ
100
Operating junction temperature range
Storage temperature range
- 55 to +150
- 55 to +150
TSTG
°C
Note 1: Pulse Test with PW=300μs, 1% Duty Cycle
Note 2: Reverse Recovery Test Conditions: IF=0.5A, IR=1.0A, IRR=0.25A
Document Number: DS_D0000075
Version: C15